Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes

Han Ki Kim; D. G. Kim; K. S. Lee; M. S. Huh; S. H. Jeong; K. I. Kim; Tae Yeon Seong

doi:10.1063/1.1923182

Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes

Han Ki Kim^*
, D. G. Kim
, K. S. Lee
, M. S. Huh
, S. H. Jeong
, K. I. Kim
, Tae Yeon Seong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

135 Citations (Scopus)

Abstract

We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2× 10-5 mA cm2) at reverse bias of -6 V as compared to that (1× 10-1 - 10-2 mA cm2 at -6 V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution electron microcopy, x-ray diffraction, and scanning electron microscopy results, we describe a possible mechanism by which plasma damage-free ITO films are grown and their application for TOLEDs.

Original language	English
Article number	183503
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	18
DOIs	https://doi.org/10.1063/1.1923182
Publication status	Published - 2005 May 2
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1923182

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title = "Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes",

abstract = "We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2× 10-5 mA cm2) at reverse bias of -6 V as compared to that (1× 10-1 - 10-2 mA cm2 at -6 V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution electron microcopy, x-ray diffraction, and scanning electron microscopy results, we describe a possible mechanism by which plasma damage-free ITO films are grown and their application for TOLEDs.",

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AU - Kim, Han Ki

AU - Kim, D. G.

AU - Lee, K. S.

AU - Huh, M. S.

AU - Jeong, S. H.

AU - Kim, K. I.

AU - Seong, Tae Yeon

PY - 2005/5/2

Y1 - 2005/5/2

N2 - We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2× 10-5 mA cm2) at reverse bias of -6 V as compared to that (1× 10-1 - 10-2 mA cm2 at -6 V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution electron microcopy, x-ray diffraction, and scanning electron microscopy results, we describe a possible mechanism by which plasma damage-free ITO films are grown and their application for TOLEDs.

AB - We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2× 10-5 mA cm2) at reverse bias of -6 V as compared to that (1× 10-1 - 10-2 mA cm2 at -6 V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution electron microcopy, x-ray diffraction, and scanning electron microscopy results, we describe a possible mechanism by which plasma damage-free ITO films are grown and their application for TOLEDs.

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Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes

Abstract

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