Plasma Nitridation Effect on β-Ga2O3 Semiconductors

Sunjae Kim; Minje Kim; Jihyun Kim; Wan Sik Hwang

doi:10.3390/nano13071199

Plasma Nitridation Effect on β-Ga₂O₃ Semiconductors

Sunjae Kim, Minje Kim, Jihyun Kim, Wan Sik Hwang

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga₂O₃. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga₂O₃ thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga₂O₃ thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline β-Ga₂O₃ thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.

Original language	English
Article number	1199
Journal	Nanomaterials
Volume	13
Issue number	7
DOIs	https://doi.org/10.3390/nano13071199
Publication status	Published - 2023 Apr
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the Korea Research Institute for defense Technology planning and advancement (KRIT)-Grant funded by the Defense Acquisition Program Administration (DAPA) (KRIT-CT-22-046) & also supported by the K-Sensor Development Program (No. RS-2022-00154729) funded by the Ministry of Trade, Industry and Energy (MOTIE, Republic of Korea).

Publisher Copyright:
© 2023 by the authors.

Keywords

defect density
GaO
gallium oxide
plasma nitridation

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science

Access to Document

10.3390/nano13071199

Cite this

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title = "Plasma Nitridation Effect on β-Ga2O3 Semiconductors",

abstract = "The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline β-Ga2O3 thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.",

keywords = "defect density, GaO, gallium oxide, plasma nitridation",

author = "Sunjae Kim and Minje Kim and Jihyun Kim and Hwang, {Wan Sik}",

note = "Funding Information: This work was supported by the Korea Research Institute for defense Technology planning and advancement (KRIT)-Grant funded by the Defense Acquisition Program Administration (DAPA) (KRIT-CT-22-046) & also supported by the K-Sensor Development Program (No. RS-2022-00154729) funded by the Ministry of Trade, Industry and Energy (MOTIE, Republic of Korea). Publisher Copyright: {\textcopyright} 2023 by the authors.",

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doi = "10.3390/nano13071199",

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AU - Kim, Sunjae

AU - Kim, Minje

AU - Kim, Jihyun

AU - Hwang, Wan Sik

N1 - Funding Information: This work was supported by the Korea Research Institute for defense Technology planning and advancement (KRIT)-Grant funded by the Defense Acquisition Program Administration (DAPA) (KRIT-CT-22-046) & also supported by the K-Sensor Development Program (No. RS-2022-00154729) funded by the Ministry of Trade, Industry and Energy (MOTIE, Republic of Korea). Publisher Copyright: © 2023 by the authors.

PY - 2023/4

Y1 - 2023/4

N2 - The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline β-Ga2O3 thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.

AB - The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline β-Ga2O3 thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.

KW - defect density

KW - GaO

KW - gallium oxide

KW - plasma nitridation

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