Plasma Nitridation Effect on β-Ga2O3 Semiconductors

Sunjae Kim, Minje Kim, Jihyun Kim, Wan Sik Hwang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline β-Ga2O3 thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.

Original languageEnglish
Article number1199
Issue number7
Publication statusPublished - 2023 Apr
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the Korea Research Institute for defense Technology planning and advancement (KRIT)-Grant funded by the Defense Acquisition Program Administration (DAPA) (KRIT-CT-22-046) & also supported by the K-Sensor Development Program (No. RS-2022-00154729) funded by the Ministry of Trade, Industry and Energy (MOTIE, Republic of Korea).

Publisher Copyright:
© 2023 by the authors.


  • defect density
  • GaO
  • gallium oxide
  • plasma nitridation

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Materials Science


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