TY - GEN
T1 - Plasma surface modification of blown polyethylene films for uniform atomic layer deposition of Al2O3
AU - Lee, Gyeong Beom
AU - Son, Kyung Sik
AU - Park, Suk Won
AU - Shim, Joon Hyung
AU - Choi, Byoung Ho
PY - 2013
Y1 - 2013
N2 - As polyethylene has unique physical characteristics such as low surface energy, low crystallization temperature, lack of polar groups, complicated lamellar structures, susceptibility to thermal degradation, and so on, most conventional coating techniques are not suitable for it. Atomic layer deposition (ALD) has many benefits over conventional coating techniques, and it can be a good candidate as a coating technique for polyethylene. In this study, a low-temperature ALD technique for depositing layers of Al2O 3 on blown, high-density polyethylene (HDPE) films was investigated. The effect of plasma surface modification on the effectiveness of the ALD technique in Al2O3 layer formation was also studied.
AB - As polyethylene has unique physical characteristics such as low surface energy, low crystallization temperature, lack of polar groups, complicated lamellar structures, susceptibility to thermal degradation, and so on, most conventional coating techniques are not suitable for it. Atomic layer deposition (ALD) has many benefits over conventional coating techniques, and it can be a good candidate as a coating technique for polyethylene. In this study, a low-temperature ALD technique for depositing layers of Al2O 3 on blown, high-density polyethylene (HDPE) films was investigated. The effect of plasma surface modification on the effectiveness of the ALD technique in Al2O3 layer formation was also studied.
UR - http://www.scopus.com/inward/record.url?scp=84885809005&partnerID=8YFLogxK
U2 - 10.1149/05013.0089ecst
DO - 10.1149/05013.0089ecst
M3 - Conference contribution
AN - SCOPUS:84885809005
SN - 9781623320126
T3 - ECS Transactions
SP - 89
EP - 92
BT - Atomic Layer Deposition Applications 8
PB - Electrochemical Society Inc.
T2 - Symposium on Atomic Layer Deposition Applications 8 - 222nd ECS Meeting/PRiME 2012
Y2 - 7 October 2012 through 12 October 2012
ER -