Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Jae Sung Kim; Min Kyu Joo; Ming Xing Piao; Seung Eon Ahn; Yong Hee Choi; Ho Kyun Jang; Gyu Tae Kim

doi:10.1063/1.4868630

Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Jae Sung Kim, Min Kyu Joo, Ming Xing Piao, Seung Eon Ahn, Yong Hee Choi, Ho Kyun Jang, Gyu Tae Kim

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47 Citations (Scopus)

Abstract

Various plasma treatment effects such as oxygen (O₂), nitrogen (N₂), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O₂ and N₂ plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.

Original language	English
Article number	114503
Journal	Journal of Applied Physics
Volume	115
Issue number	11
DOIs	https://doi.org/10.1063/1.4868630
Publication status	Published - 2014 Mar 21

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors",

abstract = "Various plasma treatment effects such as oxygen (O2), nitrogen (N2), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O2 and N2 plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.",

author = "Kim, {Jae Sung} and Joo, {Min Kyu} and {Xing Piao}, Ming and Ahn, {Seung Eon} and Choi, {Yong Hee} and Jang, {Ho Kyun} and Kim, {Gyu Tae}",

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T1 - Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

AU - Kim, Jae Sung

AU - Joo, Min Kyu

AU - Xing Piao, Ming

AU - Ahn, Seung Eon

AU - Choi, Yong Hee

AU - Jang, Ho Kyun

AU - Kim, Gyu Tae

PY - 2014/3/21

Y1 - 2014/3/21

N2 - Various plasma treatment effects such as oxygen (O2), nitrogen (N2), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O2 and N2 plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.

AB - Various plasma treatment effects such as oxygen (O2), nitrogen (N2), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O2 and N2 plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.

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Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Abstract

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