Plasma Treatment Induced Charge Transfer for Realization of Negative Differential Transconductance in Van Der Waals Single-Channel

For upcoming AI computing era, the multi-valued logic (MVL) is promising for processing multiple information with high-density device. Particularly, the negative differential transconductance (NDT) devices as element of MVL have been needed to overcome complicated heterostructures with multiple stacking process. Herein, the single-channel device is developed with NDT phenomenon through plasma treatment in van der Waals (vdW) transistor. The O₂ plasma treatment formed amorphous oxidation layer capable of charge transfer on vdW materials. Through O₂ plasma treatment on single-channel, the NDT phenomenon is implemented by forming the multiple V_TH in single-channel electrical curve due to charge transfer p-doping effect. The peak-to-valley current ratio (PVCR) of NDT phenomenon is achieved to 10². Furthermore, ternary inverter is demonstrated in single-channel combined with NDT and load device. Finally, by implementing NDT peak in single-channel transistor, the complexity and size of MVL circuit is reduced, moving away multiple heterostructure.