Plasmonically-enhanced emission from an inverted GaN light emitting diode

Michael A. Mastro; Byung Jae Kim; J. A. Freitas; Joshua D. Caldwell; Ron Rendell; Jennifer Hite; Charles R. Eddy; Jihyun Kim

doi:10.1117/12.894010

Plasmonically-enhanced emission from an inverted GaN light emitting diode

Michael A. Mastro, Byung Jae Kim, J. A. Freitas, Joshua D. Caldwell, Ron Rendell, Jennifer Hite, Charles R. Eddy, Jihyun Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the nearbandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avoid the standard thick p+ GaN current spreading contact layer. In contrast to a standard design, the top contact was a thin n++ AlGaN layer, which brought the quantum well into the fringing field of the silver nanoparticles. This proximity allowed the excitons induced within the quantum well to couple to the surface plasmons, which in turn led to the enhanced band edge emission from the LED.

Original language	English
Title of host publication	Plasmonics
Subtitle of host publication	Metallic Nanostructures and Their Optical Properties IX
DOIs	https://doi.org/10.1117/12.894010
Publication status	Published - 2011
Event	Plasmonics: Metallic Nanostructures and Their Optical Properties IX - San Diego, CA, United States Duration: 2011 Aug 21 → 2011 Aug 25

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8096
ISSN (Print)	0277-786X

Other

Other	Plasmonics: Metallic Nanostructures and Their Optical Properties IX
Country/Territory	United States
City	San Diego, CA
Period	11/8/21 → 11/8/25

Keywords

GaN
LED
Plasmonic
Silver

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.894010

Cite this

Mastro, M. A., Kim, B. J., Freitas, J. A., Caldwell, J. D., Rendell, R., Hite, J., Eddy, C. R., & Kim, J. (2011). Plasmonically-enhanced emission from an inverted GaN light emitting diode. In Plasmonics: Metallic Nanostructures and Their Optical Properties IX Article 809615 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8096). https://doi.org/10.1117/12.894010

Plasmonically-enhanced emission from an inverted GaN light emitting diode. / Mastro, Michael A.; Kim, Byung Jae; Freitas, J. A. et al.
Plasmonics: Metallic Nanostructures and Their Optical Properties IX. 2011. 809615 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8096).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mastro, MA, Kim, BJ, Freitas, JA, Caldwell, JD, Rendell, R, Hite, J, Eddy, CR & Kim, J 2011, Plasmonically-enhanced emission from an inverted GaN light emitting diode. in Plasmonics: Metallic Nanostructures and Their Optical Properties IX., 809615, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8096, Plasmonics: Metallic Nanostructures and Their Optical Properties IX, San Diego, CA, United States, 11/8/21. https://doi.org/10.1117/12.894010

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abstract = "Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the nearbandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avoid the standard thick p+ GaN current spreading contact layer. In contrast to a standard design, the top contact was a thin n++ AlGaN layer, which brought the quantum well into the fringing field of the silver nanoparticles. This proximity allowed the excitons induced within the quantum well to couple to the surface plasmons, which in turn led to the enhanced band edge emission from the LED.",

keywords = "GaN, LED, Plasmonic, Silver",

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AU - Hite, Jennifer

AU - Eddy, Charles R.

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AB - Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the nearbandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avoid the standard thick p+ GaN current spreading contact layer. In contrast to a standard design, the top contact was a thin n++ AlGaN layer, which brought the quantum well into the fringing field of the silver nanoparticles. This proximity allowed the excitons induced within the quantum well to couple to the surface plasmons, which in turn led to the enhanced band edge emission from the LED.

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Plasmonically-enhanced emission from an inverted GaN light emitting diode

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Keywords

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