Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, Jiancheng Yang, F. Ren, Gwangseok Yang, Jihyun Kim, A. Kuramata, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

101 Citations (Scopus)


Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.

Original languageEnglish
Article number032107
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2018 Jan 15

Bibliographical note

Publisher Copyright:
© 2018 Author(s).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage'. Together they form a unique fingerprint.

Cite this