Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

A. Y. Polyakov; N. B. Smirnov; I. V. Shchemerov; E. B. Yakimov; Jiancheng Yang; F. Ren; Gwangseok Yang; Jihyun Kim; A. Kuramata; S. J. Pearton

doi:10.1063/1.5012993

Point defect induced degradation of electrical properties of Ga₂O₃ by 10 MeV proton damage

A. Y. Polyakov
, N. B. Smirnov
, I. V. Shchemerov
, E. B. Yakimov
, Jiancheng Yang
, F. Ren
, Gwangseok Yang
, Jihyun Kim
, A. Kuramata
, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

149 Citations (Scopus)

Abstract

Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga₂O₃ films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga₂O₃ substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 10¹⁴ cm^-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga₂O₃ epilayers. Electron traps at E_c-0.75 eV and E_c-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.

Original language	English
Article number	032107
Journal	Applied Physics Letters
Volume	112
Issue number	3
DOIs	https://doi.org/10.1063/1.5012993
Publication status	Published - 2018 Jan 15

Bibliographical note

Publisher Copyright:
© 2018 Author(s).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.5012993

Cite this

@article{001e179a8e4e43fea8dfe1aa76633fc0,

title = "Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage",

abstract = "Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.",

author = "Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Shchemerov, \{I. V.\} and Yakimov, \{E. B.\} and Jiancheng Yang and F. Ren and Gwangseok Yang and Jihyun Kim and A. Kuramata and Pearton, \{S. J.\}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

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day = "15",

doi = "10.1063/1.5012993",

language = "English",

volume = "112",

journal = "Applied Physics Letters",

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T1 - Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Shchemerov, I. V.

AU - Yakimov, E. B.

AU - Yang, Jiancheng

AU - Ren, F.

AU - Yang, Gwangseok

AU - Kim, Jihyun

AU - Kuramata, A.

AU - Pearton, S. J.

PY - 2018/1/15

Y1 - 2018/1/15

N2 - Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.

AB - Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.

UR - https://www.scopus.com/pages/publications/85041435806

U2 - 10.1063/1.5012993

DO - 10.1063/1.5012993

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