Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, Jiancheng Yang, F. Ren, Gwangseok Yang, Jihyun Kim, A. Kuramata, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

86 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage'. Together they form a unique fingerprint.

Physics & Astronomy