Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements

R. Gul; K. Keeter; R. Rodriguez; A. E. Bolotnikov; A. Hossain; G. S. Camarda; K. H. Kim; G. Yang; Y. Cui; V. Carcelen; J. Franc; Z. Li; R. B. James

doi:10.1007/s11664-011-1802-y

Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements

R. Gul, K. Keeter, R. Rodriguez, A. E. Bolotnikov, A. Hossain, G. S. Camarda, K. H. Kim, G. Yang, Y. Cui, V. Carcelen, J. Franc, Z. Li, R. B. James

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb _Cd] ⁺-V _Cd2 ^-] ^-. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V _Cd), and a deep trap at around 1.1 eV.

Original language	English
Pages (from-to)	488-493
Number of pages	6
Journal	Journal of Electronic Materials
Volume	41
Issue number	3
DOIs	https://doi.org/10.1007/s11664-011-1802-y
Publication status	Published - 2012 Mar
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the Defense Treat Reduction Agency and US Department of Energy, Office of Nonproliferation Research and Development, NA-22.

Keywords

Bismuth
Capture cross-section
CdZnTe detectors
DLTS
Dopant
Indium
Lead
Point defects

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1007/s11664-011-1802-y

Cite this

Gul, R., Keeter, K., Rodriguez, R., Bolotnikov, A. E., Hossain, A., Camarda, G. S., Kim, K. H., Yang, G., Cui, Y., Carcelen, V., Franc, J., Li, Z., & James, R. B. (2012). Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements. Journal of Electronic Materials, 41(3), 488-493. https://doi.org/10.1007/s11664-011-1802-y

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title = "Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements",

abstract = "We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb Cd] +-V Cd2 -] -. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V Cd), and a deep trap at around 1.1 eV.",

keywords = "Bismuth, Capture cross-section, CdZnTe detectors, DLTS, Dopant, Indium, Lead, Point defects",

author = "R. Gul and K. Keeter and R. Rodriguez and Bolotnikov, {A. E.} and A. Hossain and Camarda, {G. S.} and Kim, {K. H.} and G. Yang and Y. Cui and V. Carcelen and J. Franc and Z. Li and James, {R. B.}",

note = "Funding Information: This work was supported by the Defense Treat Reduction Agency and US Department of Energy, Office of Nonproliferation Research and Development, NA-22.",

year = "2012",

month = mar,

doi = "10.1007/s11664-011-1802-y",

language = "English",

volume = "41",

pages = "488--493",

journal = "Journal of Electronic Materials",

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T1 - Point defects in Pb-, Bi-, and in-doped CdZnTe detectors

T2 - Deep-level transient spectroscopy (DLTS) measurements

AU - Gul, R.

AU - Keeter, K.

AU - Rodriguez, R.

AU - Bolotnikov, A. E.

AU - Hossain, A.

AU - Camarda, G. S.

AU - Kim, K. H.

AU - Yang, G.

AU - Cui, Y.

AU - Carcelen, V.

AU - Franc, J.

AU - Li, Z.

AU - James, R. B.

N1 - Funding Information: This work was supported by the Defense Treat Reduction Agency and US Department of Energy, Office of Nonproliferation Research and Development, NA-22.

PY - 2012/3

Y1 - 2012/3

N2 - We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb Cd] +-V Cd2 -] -. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V Cd), and a deep trap at around 1.1 eV.

AB - We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb Cd] +-V Cd2 -] -. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V Cd), and a deep trap at around 1.1 eV.

KW - Bismuth

KW - Capture cross-section

KW - CdZnTe detectors

KW - DLTS

KW - Dopant

KW - Indium

KW - Lead

KW - Point defects

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U2 - 10.1007/s11664-011-1802-y

DO - 10.1007/s11664-011-1802-y

M3 - Article

AN - SCOPUS:84858800721

SN - 0361-5235

VL - 41

SP - 488

EP - 493

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

ER -

Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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