Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements

R. Gul; K. Keeter; R. Rodriguez; A. E. Bolotnikov; A. Hossain; G. S. Camarda; K. H. Kim; G. Yang; Y. Cui; V. Carcelen; J. Franc; Z. Li; R. B. James

doi:10.1007/s11664-011-1802-y

Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements

R. Gul^*
, K. Keeter
, R. Rodriguez
, A. E. Bolotnikov
, A. Hossain
, G. S. Camarda
, K. H. Kim
, G. Yang
, Y. Cui
, V. Carcelen
, J. Franc
, Z. Li
, R. B. James

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb _Cd] ⁺-V _Cd2 ^-] ^-. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V _Cd), and a deep trap at around 1.1 eV.

Original language	English
Pages (from-to)	488-493
Number of pages	6
Journal	Journal of Electronic Materials
Volume	41
Issue number	3
DOIs	https://doi.org/10.1007/s11664-011-1802-y
Publication status	Published - 2012 Mar
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the Defense Treat Reduction Agency and US Department of Energy, Office of Nonproliferation Research and Development, NA-22.

Keywords

Bismuth
Capture cross-section
CdZnTe detectors
DLTS
Dopant
Indium
Lead
Point defects

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-011-1802-y

Cite this

Gul, R., Keeter, K., Rodriguez, R., Bolotnikov, A. E., Hossain, A., Camarda, G. S., Kim, K. H., Yang, G., Cui, Y., Carcelen, V., Franc, J., Li, Z., & James, R. B. (2012). Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements. Journal of Electronic Materials, 41(3), 488-493. https://doi.org/10.1007/s11664-011-1802-y

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title = "Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements",

abstract = "We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb Cd] +-V Cd2 -] -. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V Cd), and a deep trap at around 1.1 eV.",

keywords = "Bismuth, Capture cross-section, CdZnTe detectors, DLTS, Dopant, Indium, Lead, Point defects",

author = "R. Gul and K. Keeter and R. Rodriguez and Bolotnikov, \{A. E.\} and A. Hossain and Camarda, \{G. S.\} and Kim, \{K. H.\} and G. Yang and Y. Cui and V. Carcelen and J. Franc and Z. Li and James, \{R. B.\}",

note = "Funding Information: This work was supported by the Defense Treat Reduction Agency and US Department of Energy, Office of Nonproliferation Research and Development, NA-22.",

year = "2012",

month = mar,

doi = "10.1007/s11664-011-1802-y",

language = "English",

volume = "41",

pages = "488--493",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "3",

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TY - JOUR

T1 - Point defects in Pb-, Bi-, and in-doped CdZnTe detectors

T2 - Deep-level transient spectroscopy (DLTS) measurements

AU - Gul, R.

AU - Keeter, K.

AU - Rodriguez, R.

AU - Bolotnikov, A. E.

AU - Hossain, A.

AU - Camarda, G. S.

AU - Kim, K. H.

AU - Yang, G.

AU - Cui, Y.

AU - Carcelen, V.

AU - Franc, J.

AU - Li, Z.

AU - James, R. B.

N1 - Funding Information: This work was supported by the Defense Treat Reduction Agency and US Department of Energy, Office of Nonproliferation Research and Development, NA-22.

PY - 2012/3

Y1 - 2012/3

N2 - We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb Cd] +-V Cd2 -] -. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V Cd), and a deep trap at around 1.1 eV.

AB - We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb Cd] +-V Cd2 -] -. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V Cd), and a deep trap at around 1.1 eV.

KW - Bismuth

KW - Capture cross-section

KW - CdZnTe detectors

KW - DLTS

KW - Dopant

KW - Indium

KW - Lead

KW - Point defects

UR - https://www.scopus.com/pages/publications/84858800721

U2 - 10.1007/s11664-011-1802-y

DO - 10.1007/s11664-011-1802-y

M3 - Article

AN - SCOPUS:84858800721

SN - 0361-5235

VL - 41

SP - 488

EP - 493

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

ER -

Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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