Polarity control of carrier injection for nanowire feedback field-effect transistors

Doohyeok Lim, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

We present polarity control of the carrier injection for a feedback field-effect transistor (FBFET) with a selectively thinned p+-i-n+ Si nanowire (SiNW) channel and two separate gates. The SiNW FBFET can be reconfigured in the p- or n-channel operation modes via simple control of electric signals. The two separate gates induce potential barriers in the SiNW channel for selective control of the carrier injection. In contrast to previously reported reconfigurable transistors, our transistor features symmetry of the electrical characteristics for the p- and n-channel operation modes. Positive-feedback operation of the SiNW FBFET provides superior switching characteristics for the p- and n-type configurations, including the on/off ratios (∼ 105) and subthreshold swings (1.36-1.78 mV/dec). This novel transistor is a promising candidate for reconfigurable electronics. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)2509-2514
Number of pages6
JournalNano Research
Volume12
Issue number10
DOIs
Publication statusPublished - 2019 Oct 1

Bibliographical note

Funding Information:
This research was supported by the MOTIE (Ministry of Trade, Industry & Energy) (10067791) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device, in part by the Mid-career Researcher Program (No. NRF-2016R1E1A1A02920171), the Brain Korea 21 Plus Project in 2019 through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning and the Korea University Grant.

Publisher Copyright:
© 2019, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.

Keywords

  • positive-feedback loop
  • reconfigurable transistor
  • separate gate
  • silicon nanowire

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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