Polarization-Dependent Memory and Erasure in Quantum Dots/Graphene Synaptic Devices

Ki Jeong Lee, Jin Hyung Kim, Sooin Jeon, Chi Won Shin, Ha Reem Kim, Hong Gyu Park, Jungkil Kim

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate excitatory and inhibitory properties in a single heterostructure consisting of two quantum dots/graphene synaptic elements using linearly polarized monochromatic light. Perovskite quantum dots and PbS quantum dots were used to increase and decrease photocurrent weights, respectively. The polarization-dependent photocurrent was realized by adding a polarizer in the middle of the PbS quantum dots/graphene and perovskite quantum dots/graphene elements. When linearly polarized light passed through the polarizer, both the lower excitatory and upper inhibitory devices were activated, with the lower device with the stronger response dominating to increase the current weight. In contrast, the polarized light was blocked by the polarizer, and the above device was only operated, reducing the current weight. Furthermore, two orthogonal polarizations of light were used to perform the sequential processes of potentiation and habituation. By adjustment of the polarization angle of light, not only the direction of the current weight but also its level was altered.

Original languageEnglish
Pages (from-to)2421-2427
Number of pages7
JournalNano Letters
Volume24
Issue number7
DOIs
Publication statusPublished - 2024 Feb 21
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2024 American Chemical Society.

Keywords

  • graphene
  • optoelectronics
  • photonic device
  • quantum dot
  • Synaptic device

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering

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