Polarization fields in III-nitride nanowire devices

Michael A. Mastro, Blake Simpkins, George T. Wang, Jennifer Hite, Charles R. Eddy, Hong Youl Kim, Jaehui Ahn, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


Control of the polarization fields is the most important parameter in designing III-nitride thin-film devices, and herein we show that the polarization fields may be equally, if not more, important in devising III-nitride nanowire devices. One common approach to produce III-nitride nanowires is via a vaporliquidsolid approach that, in general, yields nanowires with the major (growth) axis in the (11̄20) direction. The cross section of this wire is an isosceles triangle with two {1̄101} facets and one {0001} facet. In this work, we analyze the polarization fields that arise in two distinct sets of crystal planes that can manifest in this triangular nanowire geometry: (0001), (1̄10̄1), (̄110̄ 1) or (000̄1), (1̄101), (̄1101). Calculations show that the polarization field at the {0001} facet is much larger than at the two opposing {1̄101} facets, although the sign of the field at each facet has a complicated dependence on the orientation and structure of the nanowire. An undoped nanowire transistor was fabricated that displayed p-type operation based solely on polarization-induced hole carriers at the (000̄1) AlGaN/GaN interface, consistent with our field calculations.

Original languageEnglish
Article number145205
Issue number14
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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