Polydiacetylene-based selective NH 3 gas sensor using Sc 2O 3/GaN structures

G. S. Lee; C. Lee; H. Choi; D. J. Ahn; J. Kim; B. P. Gila; C. R. Abernathy; S. J. Pearton; F. Ren

doi:10.1002/pssa.200723066

Polydiacetylene-based selective NH ₃ gas sensor using Sc ₂O ₃/GaN structures

G. S. Lee, C. Lee, H. Choi, D. J. Ahn, J. Kim, B. P. Gila, C. R. Abernathy, S. J. Pearton, F. Ren

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

PDA(Polydiacetylene)-supramolecules were successfully immobilized on the surface of Sc ₂O ₃/GaN/Sap-phire structures for use as selective NH ₃ gas sensors. The Sc ₂O ₃ was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non-uniform native Ga ₂O ₃. The GaN-based PDA gas sensors showed excellent selectivity for ammonia detection after the end-functional group was modified to respond to this specific gas species.

Original language	English
Pages (from-to)	3556-3561
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	204
Issue number	10
DOIs	https://doi.org/10.1002/pssa.200723066
Publication status	Published - 2007 Oct

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Surfaces and Interfaces

Access to Document

10.1002/pssa.200723066

Cite this

@article{f047350816fa460d926db7d9d3d9b3b0,

title = "Polydiacetylene-based selective NH 3 gas sensor using Sc 2O 3/GaN structures",

abstract = "PDA(Polydiacetylene)-supramolecules were successfully immobilized on the surface of Sc 2O 3/GaN/Sap-phire structures for use as selective NH 3 gas sensors. The Sc 2O 3 was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non-uniform native Ga 2O 3. The GaN-based PDA gas sensors showed excellent selectivity for ammonia detection after the end-functional group was modified to respond to this specific gas species.",

author = "Lee, {G. S.} and C. Lee and H. Choi and Ahn, {D. J.} and J. Kim and Gila, {B. P.} and Abernathy, {C. R.} and Pearton, {S. J.} and F. Ren",

year = "2007",

month = oct,

doi = "10.1002/pssa.200723066",

language = "English",

volume = "204",

pages = "3556--3561",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "10",

}

TY - JOUR

T1 - Polydiacetylene-based selective NH 3 gas sensor using Sc 2O 3/GaN structures

AU - Lee, G. S.

AU - Lee, C.

AU - Choi, H.

AU - Ahn, D. J.

AU - Kim, J.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Ren, F.

PY - 2007/10

Y1 - 2007/10

N2 - PDA(Polydiacetylene)-supramolecules were successfully immobilized on the surface of Sc 2O 3/GaN/Sap-phire structures for use as selective NH 3 gas sensors. The Sc 2O 3 was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non-uniform native Ga 2O 3. The GaN-based PDA gas sensors showed excellent selectivity for ammonia detection after the end-functional group was modified to respond to this specific gas species.

AB - PDA(Polydiacetylene)-supramolecules were successfully immobilized on the surface of Sc 2O 3/GaN/Sap-phire structures for use as selective NH 3 gas sensors. The Sc 2O 3 was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non-uniform native Ga 2O 3. The GaN-based PDA gas sensors showed excellent selectivity for ammonia detection after the end-functional group was modified to respond to this specific gas species.

UR - http://www.scopus.com/inward/record.url?scp=35348967450&partnerID=8YFLogxK

U2 - 10.1002/pssa.200723066

DO - 10.1002/pssa.200723066

M3 - Article

AN - SCOPUS:35348967450

SN - 1862-6300

VL - 204

SP - 3556

EP - 3561

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 10

ER -

Polydiacetylene-based selective NH ₃ gas sensor using Sc ₂O ₃/GaN structures

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this