Polydiacetylene-based selective NH 3 gas sensor using Sc 2O 3/GaN structures

G. S. Lee, C. Lee, H. Choi, D. J. Ahn, J. Kim, B. P. Gila, C. R. Abernathy, S. J. Pearton, F. Ren

    Research output: Contribution to journalArticlepeer-review

    18 Citations (Scopus)

    Abstract

    PDA(Polydiacetylene)-supramolecules were successfully immobilized on the surface of Sc 2O 3/GaN/Sap-phire structures for use as selective NH 3 gas sensors. The Sc 2O 3 was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non-uniform native Ga 2O 3. The GaN-based PDA gas sensors showed excellent selectivity for ammonia detection after the end-functional group was modified to respond to this specific gas species.

    Original languageEnglish
    Pages (from-to)3556-3561
    Number of pages6
    JournalPhysica Status Solidi (A) Applications and Materials Science
    Volume204
    Issue number10
    DOIs
    Publication statusPublished - 2007 Oct

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering
    • Surfaces and Interfaces

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