Polydiacetylene-based selective NH 3 gas sensor using Sc 2O 3/GaN structures

G. S. Lee, C. Lee, H. Choi, D. J. Ahn, J. Kim, B. P. Gila, C. R. Abernathy, S. J. Pearton, F. Ren

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


PDA(Polydiacetylene)-supramolecules were successfully immobilized on the surface of Sc 2O 3/GaN/Sap-phire structures for use as selective NH 3 gas sensors. The Sc 2O 3 was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non-uniform native Ga 2O 3. The GaN-based PDA gas sensors showed excellent selectivity for ammonia detection after the end-functional group was modified to respond to this specific gas species.

Original languageEnglish
Pages (from-to)3556-3561
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number10
Publication statusPublished - 2007 Oct

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Surfaces and Interfaces


Dive into the research topics of 'Polydiacetylene-based selective NH 3 gas sensor using Sc 2O 3/GaN structures'. Together they form a unique fingerprint.

Cite this