Position-controlled selective growth of ZnO nanorods on si substrates using facet-controlled GaN micropatterns

Zinc oxide nanorod arrays were selectively grown on Si substrates using facet-controlled GaN micropatterns with highly anisotropic surface energies. Electron microscopy and high resolution SR-XRD revealed that single crystal ZnO nanorods were heteroepitaxially grown only on a top surface of GaN with uniform distributions in their diameters and lengths. These selectively grown ZnO nanorods exhibit excellent photoluminescent characteristics with a free exciton photoluminescence (PL) peak as well as well-resolved bound exciton PL peaks. The accurate position-control of the nanorods provides an easy way to integrate vertical nanorods for many electronic and optoelectronic integrated circuit applications.