Possibility of transport through a single acceptor in a gate-all-around silicon nanowire PMOSFET

Byoung Hak Hong; Young Chai Jung; Jae Sung Rieh; Sung Woo Hwang; Keun Hwi Cho; K. H. Yeo; S. D. Suk; Y. Y. Yeoh; M. Li; Dong Won Kim; Donggun Park; Kyung Seok Oh; Won Seong Lee

doi:10.1109/TNANO.2009.2021844

Possibility of transport through a single acceptor in a gate-all-around silicon nanowire PMOSFET

Byoung Hak Hong, Young Chai Jung, Jae Sung Rieh, Sung Woo Hwang, Keun Hwi Cho, K. H. Yeo, S. D. Suk, Y. Y. Yeoh, M. Li, Dong Won Kim, Donggun Park, Kyung Seok Oh, Won Seong Lee

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single hole tunneling, one device exhibited strong current peaks, surviving even at room temperature. The separations between these current peaks corresponded to the energy of 25 and 26 meV. These values were consistent with the sum of the bound-state energy spacing and the charging energy of a single boron atom. The radius calculated from the obtained single-atom charging energy was also comparable to the light-hole Bohr radius.

Original language	English
Article number	4907082
Pages (from-to)	713-717
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	8
Issue number	6
DOIs	https://doi.org/10.1109/TNANO.2009.2021844
Publication status	Published - 2009 Nov

Bibliographical note

Funding Information:
Manuscript received July 23, 2008; revised February 19, 2009 and April 9, 2009. First published May 2, 2009; current version published November 11, 2009. This work was supported by the Korean Ministry of Science and Technology through the Creative Research Initiatives Program Research Center for Time Domain Nano-Functional Devices (TiNa) of the Ministry of Science and Technology (MOST)/Korea Science and Engineering Foundation (KOSEF) under Contract R16-2007-007-01001-0(2008). The work of B. H. Hong, Y. C. Jung, S. W. Hwang, and J. S. Rieh was supported by the second stage of Brain Korea 21 Project in 2008. The work of S. W. Hwang was supported by Korea University. This paper was presented in part at the IEEE Silicon Nanoelectronics Workshop, HI, June 2008. The review of this paper was arranged by Associate Editor T. Hiramoto.

Keywords

Gate-all-around (GAA)
Silicon nanowire FET (SNWFET)
Single-acceptor atom
Temperature dependence

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/TNANO.2009.2021844

Cite this

Hong, B. H., Jung, Y. C., Rieh, J. S., Hwang, S. W., Cho, K. H., Yeo, K. H., Suk, S. D., Yeoh, Y. Y., Li, M., Kim, D. W., Park, D., Oh, K. S., & Lee, W. S. (2009). Possibility of transport through a single acceptor in a gate-all-around silicon nanowire PMOSFET. IEEE Transactions on Nanotechnology, 8(6), 713-717. Article 4907082. https://doi.org/10.1109/TNANO.2009.2021844

@article{5f1f9ef2a6b5441b8740d26f7f82d159,

title = "Possibility of transport through a single acceptor in a gate-all-around silicon nanowire PMOSFET",

abstract = "Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single hole tunneling, one device exhibited strong current peaks, surviving even at room temperature. The separations between these current peaks corresponded to the energy of 25 and 26 meV. These values were consistent with the sum of the bound-state energy spacing and the charging energy of a single boron atom. The radius calculated from the obtained single-atom charging energy was also comparable to the light-hole Bohr radius.",

keywords = "Gate-all-around (GAA), Silicon nanowire FET (SNWFET), Single-acceptor atom, Temperature dependence",

author = "Hong, {Byoung Hak} and Jung, {Young Chai} and Rieh, {Jae Sung} and Hwang, {Sung Woo} and Cho, {Keun Hwi} and Yeo, {K. H.} and Suk, {S. D.} and Yeoh, {Y. Y.} and M. Li and Kim, {Dong Won} and Donggun Park and Oh, {Kyung Seok} and Lee, {Won Seong}",

note = "Funding Information: Manuscript received July 23, 2008; revised February 19, 2009 and April 9, 2009. First published May 2, 2009; current version published November 11, 2009. This work was supported by the Korean Ministry of Science and Technology through the Creative Research Initiatives Program Research Center for Time Domain Nano-Functional Devices (TiNa) of the Ministry of Science and Technology (MOST)/Korea Science and Engineering Foundation (KOSEF) under Contract R16-2007-007-01001-0(2008). The work of B. H. Hong, Y. C. Jung, S. W. Hwang, and J. S. Rieh was supported by the second stage of Brain Korea 21 Project in 2008. The work of S. W. Hwang was supported by Korea University. This paper was presented in part at the IEEE Silicon Nanoelectronics Workshop, HI, June 2008. The review of this paper was arranged by Associate Editor T. Hiramoto.",

year = "2009",

month = nov,

doi = "10.1109/TNANO.2009.2021844",

language = "English",

volume = "8",

pages = "713--717",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Possibility of transport through a single acceptor in a gate-all-around silicon nanowire PMOSFET

AU - Hong, Byoung Hak

AU - Jung, Young Chai

AU - Rieh, Jae Sung

AU - Hwang, Sung Woo

AU - Cho, Keun Hwi

AU - Yeo, K. H.

AU - Suk, S. D.

AU - Yeoh, Y. Y.

AU - Li, M.

AU - Kim, Dong Won

AU - Park, Donggun

AU - Oh, Kyung Seok

AU - Lee, Won Seong

N1 - Funding Information: Manuscript received July 23, 2008; revised February 19, 2009 and April 9, 2009. First published May 2, 2009; current version published November 11, 2009. This work was supported by the Korean Ministry of Science and Technology through the Creative Research Initiatives Program Research Center for Time Domain Nano-Functional Devices (TiNa) of the Ministry of Science and Technology (MOST)/Korea Science and Engineering Foundation (KOSEF) under Contract R16-2007-007-01001-0(2008). The work of B. H. Hong, Y. C. Jung, S. W. Hwang, and J. S. Rieh was supported by the second stage of Brain Korea 21 Project in 2008. The work of S. W. Hwang was supported by Korea University. This paper was presented in part at the IEEE Silicon Nanoelectronics Workshop, HI, June 2008. The review of this paper was arranged by Associate Editor T. Hiramoto.

PY - 2009/11

Y1 - 2009/11

N2 - Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single hole tunneling, one device exhibited strong current peaks, surviving even at room temperature. The separations between these current peaks corresponded to the energy of 25 and 26 meV. These values were consistent with the sum of the bound-state energy spacing and the charging energy of a single boron atom. The radius calculated from the obtained single-atom charging energy was also comparable to the light-hole Bohr radius.

AB - Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single hole tunneling, one device exhibited strong current peaks, surviving even at room temperature. The separations between these current peaks corresponded to the energy of 25 and 26 meV. These values were consistent with the sum of the bound-state energy spacing and the charging energy of a single boron atom. The radius calculated from the obtained single-atom charging energy was also comparable to the light-hole Bohr radius.

KW - Gate-all-around (GAA)

KW - Silicon nanowire FET (SNWFET)

KW - Single-acceptor atom

KW - Temperature dependence

UR - http://www.scopus.com/inward/record.url?scp=70749103155&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2009.2021844

DO - 10.1109/TNANO.2009.2021844

M3 - Article

AN - SCOPUS:70749103155

SN - 1536-125X

VL - 8

SP - 713

EP - 717

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 6

M1 - 4907082

ER -

Possibility of transport through a single acceptor in a gate-all-around silicon nanowire PMOSFET

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this