Possibility of transport through a single acceptor in a gate-all-around silicon nanowire PMOSFET

Byoung Hak Hong, Young Chai Jung, Jae Sung Rieh, Sung Woo Hwang, Keun Hwi Cho, K. H. Yeo, S. D. Suk, Y. Y. Yeoh, M. Li, Dong Won Kim, Donggun Park, Kyung Seok Oh, Won Seong Lee

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single hole tunneling, one device exhibited strong current peaks, surviving even at room temperature. The separations between these current peaks corresponded to the energy of 25 and 26 meV. These values were consistent with the sum of the bound-state energy spacing and the charging energy of a single boron atom. The radius calculated from the obtained single-atom charging energy was also comparable to the light-hole Bohr radius.

Original languageEnglish
Article number4907082
Pages (from-to)713-717
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume8
Issue number6
DOIs
Publication statusPublished - 2009 Nov

Bibliographical note

Funding Information:
Manuscript received July 23, 2008; revised February 19, 2009 and April 9, 2009. First published May 2, 2009; current version published November 11, 2009. This work was supported by the Korean Ministry of Science and Technology through the Creative Research Initiatives Program Research Center for Time Domain Nano-Functional Devices (TiNa) of the Ministry of Science and Technology (MOST)/Korea Science and Engineering Foundation (KOSEF) under Contract R16-2007-007-01001-0(2008). The work of B. H. Hong, Y. C. Jung, S. W. Hwang, and J. S. Rieh was supported by the second stage of Brain Korea 21 Project in 2008. The work of S. W. Hwang was supported by Korea University. This paper was presented in part at the IEEE Silicon Nanoelectronics Workshop, HI, June 2008. The review of this paper was arranged by Associate Editor T. Hiramoto.

Keywords

  • Gate-all-around (GAA)
  • Silicon nanowire FET (SNWFET)
  • Single-acceptor atom
  • Temperature dependence

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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