Possible degradation mechanism in ZnS:Mn alternating current thin-film electroluminescent display

Yun Hi Lee; In Jae Chung; Myung Hwan Oh

doi:10.1063/1.104456

Possible degradation mechanism in ZnS:Mn alternating current thin-film electroluminescent display

Yun Hi Lee, In Jae Chung, Myung Hwan Oh

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

To study origins of alternating current thin-film electroluminescent display (AC-TFELD) degradation phenomena, we have fabricated two different types of AC-TFELD with multilayered insulators. For an accelerated aging, high-frequency voltages were applied and brightness versus operating time characteristics were measured. Surface morphology (SEM), Auger electron spectroscopy (AES) in-depth profiles, and AES spectra were examined for the aged devices with and without Si₃N₄ interlayers. From the obtained results, we proposed that the formation of zinc-oxy-sulfides in ZnS:Mn-insulator at the ITO side may play a significant role in the aging phenomena and degradation of brightness (B)-operating time (T) characteristics for our devices. Therefore, we suggest that the dielectric interlayer of stable stochiometry must be inserted in ZnS:Mn-insulator at the In₂O ₃-SnO₂(ITO) side to improve the aging characteristics.

Original language	English
Pages (from-to)	962-964
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	9
DOIs	https://doi.org/10.1063/1.104456
Publication status	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Possible degradation mechanism in ZnS:Mn alternating current thin-film electroluminescent display",

abstract = "To study origins of alternating current thin-film electroluminescent display (AC-TFELD) degradation phenomena, we have fabricated two different types of AC-TFELD with multilayered insulators. For an accelerated aging, high-frequency voltages were applied and brightness versus operating time characteristics were measured. Surface morphology (SEM), Auger electron spectroscopy (AES) in-depth profiles, and AES spectra were examined for the aged devices with and without Si3N4 interlayers. From the obtained results, we proposed that the formation of zinc-oxy-sulfides in ZnS:Mn-insulator at the ITO side may play a significant role in the aging phenomena and degradation of brightness (B)-operating time (T) characteristics for our devices. Therefore, we suggest that the dielectric interlayer of stable stochiometry must be inserted in ZnS:Mn-insulator at the In2O 3-SnO2(ITO) side to improve the aging characteristics.",

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T1 - Possible degradation mechanism in ZnS:Mn alternating current thin-film electroluminescent display

AU - Lee, Yun Hi

AU - Chung, In Jae

AU - Oh, Myung Hwan

PY - 1991

Y1 - 1991

N2 - To study origins of alternating current thin-film electroluminescent display (AC-TFELD) degradation phenomena, we have fabricated two different types of AC-TFELD with multilayered insulators. For an accelerated aging, high-frequency voltages were applied and brightness versus operating time characteristics were measured. Surface morphology (SEM), Auger electron spectroscopy (AES) in-depth profiles, and AES spectra were examined for the aged devices with and without Si3N4 interlayers. From the obtained results, we proposed that the formation of zinc-oxy-sulfides in ZnS:Mn-insulator at the ITO side may play a significant role in the aging phenomena and degradation of brightness (B)-operating time (T) characteristics for our devices. Therefore, we suggest that the dielectric interlayer of stable stochiometry must be inserted in ZnS:Mn-insulator at the In2O 3-SnO2(ITO) side to improve the aging characteristics.

AB - To study origins of alternating current thin-film electroluminescent display (AC-TFELD) degradation phenomena, we have fabricated two different types of AC-TFELD with multilayered insulators. For an accelerated aging, high-frequency voltages were applied and brightness versus operating time characteristics were measured. Surface morphology (SEM), Auger electron spectroscopy (AES) in-depth profiles, and AES spectra were examined for the aged devices with and without Si3N4 interlayers. From the obtained results, we proposed that the formation of zinc-oxy-sulfides in ZnS:Mn-insulator at the ITO side may play a significant role in the aging phenomena and degradation of brightness (B)-operating time (T) characteristics for our devices. Therefore, we suggest that the dielectric interlayer of stable stochiometry must be inserted in ZnS:Mn-insulator at the In2O 3-SnO2(ITO) side to improve the aging characteristics.

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JO - Applied Physics Letters

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Possible degradation mechanism in ZnS:Mn alternating current thin-film electroluminescent display

Abstract

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