Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices

S. J. Chung; S. Lee; I. W. Park; X. Liu; J. K. Furdyna

doi:10.1063/1.1676025

Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices

S. J. Chung, S. Lee, I. W. Park, X. Liu, J. K. Furdyna

Department of Physics

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29 Citations (Scopus)

Abstract

The effects of free carriers in the nonmagnetic spacer layer on the magnetic properties of GaMnAs/GaAs ferromagnetic semiconductor superlattices (SL) were investigated. In the SL system, one of the SL structures was doped with Be in the GaAs spacer layers, and the GaAs layer of the other SL were undoped in order to investigate the effects of carriers. The remanent magnetization of the two SL were calculated in order to analyze the robustness of the SL systems. The hardness of the magnetization in the SL with Be-doped GaAs layer was found to be related to interlayer coupling which was introduced by doping of the nonmagnetic layers.

Original language	English
Pages (from-to)	7402-7404
Number of pages	3
Journal	Journal of Applied Physics
Volume	95
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1676025
Publication status	Published - 2004 Jun 1

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Physics and Astronomy(all)

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10.1063/1.1676025

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abstract = "The effects of free carriers in the nonmagnetic spacer layer on the magnetic properties of GaMnAs/GaAs ferromagnetic semiconductor superlattices (SL) were investigated. In the SL system, one of the SL structures was doped with Be in the GaAs spacer layers, and the GaAs layer of the other SL were undoped in order to investigate the effects of carriers. The remanent magnetization of the two SL were calculated in order to analyze the robustness of the SL systems. The hardness of the magnetization in the SL with Be-doped GaAs layer was found to be related to interlayer coupling which was introduced by doping of the nonmagnetic layers.",

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T1 - Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices

AU - Chung, S. J.

AU - Lee, S.

AU - Park, I. W.

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The effects of free carriers in the nonmagnetic spacer layer on the magnetic properties of GaMnAs/GaAs ferromagnetic semiconductor superlattices (SL) were investigated. In the SL system, one of the SL structures was doped with Be in the GaAs spacer layers, and the GaAs layer of the other SL were undoped in order to investigate the effects of carriers. The remanent magnetization of the two SL were calculated in order to analyze the robustness of the SL systems. The hardness of the magnetization in the SL with Be-doped GaAs layer was found to be related to interlayer coupling which was introduced by doping of the nonmagnetic layers.

AB - The effects of free carriers in the nonmagnetic spacer layer on the magnetic properties of GaMnAs/GaAs ferromagnetic semiconductor superlattices (SL) were investigated. In the SL system, one of the SL structures was doped with Be in the GaAs spacer layers, and the GaAs layer of the other SL were undoped in order to investigate the effects of carriers. The remanent magnetization of the two SL were calculated in order to analyze the robustness of the SL systems. The hardness of the magnetization in the SL with Be-doped GaAs layer was found to be related to interlayer coupling which was introduced by doping of the nonmagnetic layers.

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DO - 10.1063/1.1676025

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 II

ER -

Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices

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