Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes

June O. Song; Hyun Gi Hong; Joon Woo Jeon; Jung Inn Sohn; Ja Soon Jang; Tae Yeon Seong

doi:10.1149/1.2819536

Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes

June O. Song, Hyun Gi Hong, Joon Woo Jeon, Jung Inn Sohn, Ja Soon Jang, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots.

Original language	English
Pages (from-to)	H36-H38
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	2
DOIs	https://doi.org/10.1149/1.2819536
Publication status	Published - 2008

Bibliographical note

Funding Information:
We sincerely thank Professor Po Teen Lim and the two anonymous reviewers for their very useful and insightful comments. This study was largely supported by the National Key R&D Program of China (No. 2018YFD0901500 ; 2018YFE0103700 ), the National Natural Science Foundation (Nos. 41876124 ; 61871293 ; 41706147 ; 31570364 ), Key Fishery and Agricultural Science and Technology project in Dongtou District of Wenzhou ( N2018Y03A ), Wenzhou Water Pollution Control and Treatment Technology Innovation Project ( S20160003 ) and Laboratory of Marine Ecosystem and Biogeochemistry, Second Institute of Oceanography (No. LMEB201706 ).

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2819536

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title = "Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes",

abstract = "We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots.",

author = "Song, {June O.} and Hong, {Hyun Gi} and Jeon, {Joon Woo} and Sohn, {Jung Inn} and Jang, {Ja Soon} and Seong, {Tae Yeon}",

note = "Funding Information: We sincerely thank Professor Po Teen Lim and the two anonymous reviewers for their very useful and insightful comments. This study was largely supported by the National Key R&D Program of China (No. 2018YFD0901500 ; 2018YFE0103700 ), the National Natural Science Foundation (Nos. 41876124 ; 61871293 ; 41706147 ; 31570364 ), Key Fishery and Agricultural Science and Technology project in Dongtou District of Wenzhou ( N2018Y03A ), Wenzhou Water Pollution Control and Treatment Technology Innovation Project ( S20160003 ) and Laboratory of Marine Ecosystem and Biogeochemistry, Second Institute of Oceanography (No. LMEB201706 ). ",

year = "2008",

doi = "10.1149/1.2819536",

language = "English",

volume = "11",

pages = "H36--H38",

journal = "Electrochemical and Solid-State Letters",

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publisher = "Electrochemical Society Inc.",

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T1 - Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes

AU - Song, June O.

AU - Hong, Hyun Gi

AU - Jeon, Joon Woo

AU - Sohn, Jung Inn

AU - Jang, Ja Soon

AU - Seong, Tae Yeon

N1 - Funding Information: We sincerely thank Professor Po Teen Lim and the two anonymous reviewers for their very useful and insightful comments. This study was largely supported by the National Key R&D Program of China (No. 2018YFD0901500 ; 2018YFE0103700 ), the National Natural Science Foundation (Nos. 41876124 ; 61871293 ; 41706147 ; 31570364 ), Key Fishery and Agricultural Science and Technology project in Dongtou District of Wenzhou ( N2018Y03A ), Wenzhou Water Pollution Control and Treatment Technology Innovation Project ( S20160003 ) and Laboratory of Marine Ecosystem and Biogeochemistry, Second Institute of Oceanography (No. LMEB201706 ).

PY - 2008

Y1 - 2008

N2 - We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots.

AB - We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots.

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Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes

Abstract

Bibliographical note

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