Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors

G. Yang; A. E. Bolotnikov; P. M. Fochuk; O. Kopach; J. Franc; E. Belas; K. H. Kim; G. S. Camarda; A. Hossain; Y. Cui; A. L. Adams; A. Radja; R. Pinder; R. B. James

doi:10.1016/j.jcrysgro.2012.11.041

Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors

G. Yang, A. E. Bolotnikov, P. M. Fochuk, O. Kopach, J. Franc, E. Belas, K. H. Kim, G. S. Camarda, A. Hossain, Y. Cui, A. L. Adams, A. Radja, R. Pinder, R. B. James

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In this paper, we summarize some of our recent research on annealing detector-grade CZT crystals. Our results show that annealing in a Cd vapor effectively removes Te inclusions from CZT. The migration of Te inclusions was also observed for annealing in a temperature-gradient field. We recorded a loss of resistivity of the detector-grade CZT after annealing in a Cd vapor. The underlying mechanism of this loss was discussed, and solutions including two-step annealing (Cd annealing followed by Te annealing) and one-step annealing with Cd and Zn pressure control were proposed to maintain high resistivity.

Original language	English
Pages (from-to)	16-20
Number of pages	5
Journal	Journal of Crystal Growth
Volume	379
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.11.041
Publication status	Published - 2013
Externally published	Yes

Keywords

A1. Defect
A1. Radiation detectors
B1. Cadmium compounds
B2 Semi-conducting II-VI materials
B2. CdZnTe

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2012.11.041

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Yang, G., Bolotnikov, A. E., Fochuk, P. M., Kopach, O., Franc, J., Belas, E., Kim, K. H., Camarda, G. S., Hossain, A., Cui, Y., Adams, A. L., Radja, A., Pinder, R., & James, R. B. (2013). Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors. Journal of Crystal Growth, 379, 16-20. https://doi.org/10.1016/j.jcrysgro.2012.11.041

@article{ce3a964d461e4bfbae08d4b31b773f16,

title = "Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors",

abstract = "Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In this paper, we summarize some of our recent research on annealing detector-grade CZT crystals. Our results show that annealing in a Cd vapor effectively removes Te inclusions from CZT. The migration of Te inclusions was also observed for annealing in a temperature-gradient field. We recorded a loss of resistivity of the detector-grade CZT after annealing in a Cd vapor. The underlying mechanism of this loss was discussed, and solutions including two-step annealing (Cd annealing followed by Te annealing) and one-step annealing with Cd and Zn pressure control were proposed to maintain high resistivity.",

keywords = "A1. Defect, A1. Radiation detectors, B1. Cadmium compounds, B2 Semi-conducting II-VI materials, B2. CdZnTe",

author = "G. Yang and Bolotnikov, {A. E.} and Fochuk, {P. M.} and O. Kopach and J. Franc and E. Belas and Kim, {K. H.} and Camarda, {G. S.} and A. Hossain and Y. Cui and Adams, {A. L.} and A. Radja and R. Pinder and James, {R. B.}",

note = "Funding Information: This work was supported by US Department of Energy, Office of Nonproliferation & Verification Research & Development, NA-22 . The manuscript has been authored by Brookhaven Science Associates, LLC under Contract no. DE-AC02-98CH1-886 with the US Department of Energy. Also it was supported partly by GIPP program, project STCU #P-406.",

year = "2013",

doi = "10.1016/j.jcrysgro.2012.11.041",

language = "English",

volume = "379",

pages = "16--20",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

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TY - JOUR

T1 - Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors

AU - Yang, G.

AU - Bolotnikov, A. E.

AU - Fochuk, P. M.

AU - Kopach, O.

AU - Franc, J.

AU - Belas, E.

AU - Kim, K. H.

AU - Camarda, G. S.

AU - Hossain, A.

AU - Cui, Y.

AU - Adams, A. L.

AU - Radja, A.

AU - Pinder, R.

AU - James, R. B.

N1 - Funding Information: This work was supported by US Department of Energy, Office of Nonproliferation & Verification Research & Development, NA-22 . The manuscript has been authored by Brookhaven Science Associates, LLC under Contract no. DE-AC02-98CH1-886 with the US Department of Energy. Also it was supported partly by GIPP program, project STCU #P-406.

PY - 2013

Y1 - 2013

N2 - Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In this paper, we summarize some of our recent research on annealing detector-grade CZT crystals. Our results show that annealing in a Cd vapor effectively removes Te inclusions from CZT. The migration of Te inclusions was also observed for annealing in a temperature-gradient field. We recorded a loss of resistivity of the detector-grade CZT after annealing in a Cd vapor. The underlying mechanism of this loss was discussed, and solutions including two-step annealing (Cd annealing followed by Te annealing) and one-step annealing with Cd and Zn pressure control were proposed to maintain high resistivity.

AB - Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In this paper, we summarize some of our recent research on annealing detector-grade CZT crystals. Our results show that annealing in a Cd vapor effectively removes Te inclusions from CZT. The migration of Te inclusions was also observed for annealing in a temperature-gradient field. We recorded a loss of resistivity of the detector-grade CZT after annealing in a Cd vapor. The underlying mechanism of this loss was discussed, and solutions including two-step annealing (Cd annealing followed by Te annealing) and one-step annealing with Cd and Zn pressure control were proposed to maintain high resistivity.

KW - A1. Defect

KW - A1. Radiation detectors

KW - B1. Cadmium compounds

KW - B2 Semi-conducting II-VI materials

KW - B2. CdZnTe

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DO - 10.1016/j.jcrysgro.2012.11.041

M3 - Article

AN - SCOPUS:84884910602

SN - 0022-0248

VL - 379

SP - 16

EP - 20

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors

Abstract

Keywords

ASJC Scopus subject areas

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