Potential induced degradation of n-type crystalline silicon solar cells with p+ front junction

Soohyun Bae, Wonwook Oh, Kyung Dong Lee, Seongtak Kim, Hyunho Kim, Nochang Park, Sung Il Chan, Sungeun Park, Yoonmook Kang, Hae Seok Lee, Donghwan Kim

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)

Abstract

N-type silicon-based solar cells are currently being used for achieving high efficiency. However, most of the photovoltaic modules already constructed are based on p-type silicon solar cells, and there are few studies on potential induced degradation (PID) in n-type solar cells. In this study, we investigated PID in n-type silicon solar cells with a front p+ emitter. Further, the PID characteristics of n-type solar cells are compared with those of p-type solar cells. The electrical properties of PID in solar cells are observed with the light I-V, quantum efficiency (QE), and electroluminescence (EL). The possible causes for the change in the external quantum efficiency (EQE) after PID are interpreted using PC1D and are discussed by comparing the experimental results with the simulation results.

Original languageEnglish
Pages (from-to)30-37
Number of pages8
JournalEnergy Science and Engineering
Volume5
Issue number1
DOIs
Publication statusPublished - 2017 Feb 1

Bibliographical note

Funding Information:
This work was supported by the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea. (No. 20143030011960).

Publisher Copyright:
© 2017 The Authors. Energy Science & Engineering published by the Society of Chemical Industry and John Wiley & Sons Ltd.

Keywords

  • Boron-doped emitter
  • n-type silicon solar cell
  • photovoltaic module
  • potential induced degradation
  • quantum efficiency

ASJC Scopus subject areas

  • Safety, Risk, Reliability and Quality
  • General Energy

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