TY - JOUR
T1 - Potential of chemical rounding for the performance enhancement of pyramid textured p-type emitters and bifacial n-PERT Si cells
AU - Song, Inseol
AU - Lee, Hyunju
AU - Lee, Sang Won
AU - Bae, Soohyun
AU - Hyun, Ji Yeon
AU - Kang, Yoonmook
AU - Lee, Hae Seok
AU - Ohshita, Yoshio
AU - Ogura, Atsushi
AU - Kim, Donghwan
N1 - Funding Information:
The authors thank the staffs of Collaborative Clean Room at Toyota Technological Institute for experimental support on sample fabrication. This work has been supported by the Research Center for Smart Energy Technology at Toyota Technological Institute and the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning ( KETEP ) granted financial from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20163030014020 ).
Funding Information:
The authors thank the staffs of Collaborative Clean Room at Toyota Technological Institute for experimental support on sample fabrication. This work has been supported by the Research Center for Smart Energy Technology at Toyota Technological Institute and the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) granted financial from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20163030014020).
Publisher Copyright:
© 2018
PY - 2018/11
Y1 - 2018/11
N2 - We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of AlOx- and AlOx/SiNx:H stack-passivated pyramid textured p+-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured p+-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of AlOx layers on pyramid textured p+-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance (RSW) from ∼2.5 to ∼3.7% for the AlOx/SiNx:H stack-passivated pyramid textured p+-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ∼60 and ∼100 Ω/sq p+-emitters is reduced by 0.8 and 0.6 mA/cm2, respectively under front p+-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ∼60 and ∼100 Ω/sq p+-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ∼100 Ω/sq p+-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.
AB - We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of AlOx- and AlOx/SiNx:H stack-passivated pyramid textured p+-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured p+-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of AlOx layers on pyramid textured p+-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance (RSW) from ∼2.5 to ∼3.7% for the AlOx/SiNx:H stack-passivated pyramid textured p+-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ∼60 and ∼100 Ω/sq p+-emitters is reduced by 0.8 and 0.6 mA/cm2, respectively under front p+-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ∼60 and ∼100 Ω/sq p+-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ∼100 Ω/sq p+-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.
KW - AlO passivation
KW - Bifacial n-PERT solar cell
KW - Chemical rounding
KW - Pyramid texturing
KW - Solar-weighted reflectance
KW - p-emitter
UR - http://www.scopus.com/inward/record.url?scp=85050360336&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2018.07.004
DO - 10.1016/j.cap.2018.07.004
M3 - Article
AN - SCOPUS:85050360336
SN - 1567-1739
VL - 18
SP - 1268
EP - 1274
JO - Current Applied Physics
JF - Current Applied Physics
IS - 11
ER -