Abstract
In this work, nickel silicide was applied to tandem solar cells as an interlayer. By the process of thermal evaporation, a layer of NiOx, hole transport layer (HTL) was deposited on n+ poly-Si layer directly. Nickel silicide was simultaneously formed by nickel diffusion from NiOx to n+ poly-Si layer during the deposition and annealing process. The I–V characteristics of NiOx/n+ poly-Si contact with nickel silicide showed ohmic contact and low contact resistivity. This structure is expected to be more advantageous for electrical connection between perovskite top cell and TOPCon bottom cell compared to the NiOx/TCO/n+ poly-Si structure showing Schottky contact. Furthermore, nickel silicide and Ni-deficient NiOx thin film formed by diffusion of nickel can improve the fill factor of the two sub cells. These results imply the potential of a NiOx/nickel silicide/n+ poly-Si structure as a perovskite/silicon tandem solar cell interlayer.
Original language | English |
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Article number | 870 |
Journal | Energies |
Volume | 15 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2022 Feb 1 |
Bibliographical note
Publisher Copyright:© 2022 by the authors. Licensee MDPI, Basel, Switzerland.
Keywords
- NiO/n poly-Si contact
- Nickel silicide
- Perovskite/silicon tandem solar cells
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Fuel Technology
- Engineering (miscellaneous)
- Energy Engineering and Power Technology
- Energy (miscellaneous)
- Control and Optimization
- Electrical and Electronic Engineering