In this work, nickel silicide was applied to tandem solar cells as an interlayer. By the process of thermal evaporation, a layer of NiOx, hole transport layer (HTL) was deposited on n+ poly-Si layer directly. Nickel silicide was simultaneously formed by nickel diffusion from NiOx to n+ poly-Si layer during the deposition and annealing process. The I–V characteristics of NiOx/n+ poly-Si contact with nickel silicide showed ohmic contact and low contact resistivity. This structure is expected to be more advantageous for electrical connection between perovskite top cell and TOPCon bottom cell compared to the NiOx/TCO/n+ poly-Si structure showing Schottky contact. Furthermore, nickel silicide and Ni-deficient NiOx thin film formed by diffusion of nickel can improve the fill factor of the two sub cells. These results imply the potential of a NiOx/nickel silicide/n+ poly-Si structure as a perovskite/silicon tandem solar cell interlayer.
Bibliographical noteFunding Information:
Funding: This work was conducted under the New and Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) granted financial from the Ministry of Trade, Industry and Energy, Republic of Korea (No. 20193010014530). This work was supported by the Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry and Energy, Republic of Korea. (No. 20204010600470).
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.
- NiO/n poly-Si contact
- Nickel silicide
- Perovskite/silicon tandem solar cells
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Control and Optimization
- Energy (miscellaneous)
- Engineering (miscellaneous)
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
- Fuel Technology
- Renewable Energy, Sustainability and the Environment