Potential of NiOx/Nickel Silicide/n+ Poly-Si Contact for Perovskite/TOPCon Tandem Solar Cells

Jiryang Kim, Dowon Pyun, Dongjin Choi, Seok Hyun Jeong, Changhyun Lee, Jiyeon Hyun, Ha Eun Lee, Sang Won Lee, Hoyoung Song, Solhee Lee, Donghwan Kim, Yoonmook Kang, Hae Seok Lee

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


In this work, nickel silicide was applied to tandem solar cells as an interlayer. By the process of thermal evaporation, a layer of NiOx, hole transport layer (HTL) was deposited on n+ poly-Si layer directly. Nickel silicide was simultaneously formed by nickel diffusion from NiOx to n+ poly-Si layer during the deposition and annealing process. The I–V characteristics of NiOx/n+ poly-Si contact with nickel silicide showed ohmic contact and low contact resistivity. This structure is expected to be more advantageous for electrical connection between perovskite top cell and TOPCon bottom cell compared to the NiOx/TCO/n+ poly-Si structure showing Schottky contact. Furthermore, nickel silicide and Ni-deficient NiOx thin film formed by diffusion of nickel can improve the fill factor of the two sub cells. These results imply the potential of a NiOx/nickel silicide/n+ poly-Si structure as a perovskite/silicon tandem solar cell interlayer.

Original languageEnglish
Article number870
Issue number3
Publication statusPublished - 2022 Feb 1

Bibliographical note

Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.


  • NiO/n poly-Si contact
  • Nickel silicide
  • Perovskite/silicon tandem solar cells
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Control and Optimization
  • Energy (miscellaneous)
  • Engineering (miscellaneous)
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Fuel Technology
  • Renewable Energy, Sustainability and the Environment


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