Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys

F. C. Peiris; S. Lee; U. Bindley; J. K. Furdyna

doi:10.1116/1.591400

Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys

F. C. Peiris, S. Lee, U. Bindley, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The composition and the thickness of II-VI semiconductor ternary alloys is determined simultaneously using the prism coupler technique. This approach, which determines the indices of refraction n with high precision and also the epilayer thicknesses with an uncertainty of less than 0.5%, has been applied to a series of molecular-beam epitaxy grown ternary alloy families, Zn_1-xCd_xSe, Zn_1-xMg_xSe, Zn_1-xBe_xSe, Zn_1-xMn_xSe, and ZnSe_1-xTe_x. It can generate a calibration between n and the alloy composition and the growth rates are obtained concurrently.

Original language	English
Pages (from-to)	1443-1447
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.591400
Publication status	Published - 2000 May
Externally published	Yes

Bibliographical note

Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.591400

Cite this

Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys. / Peiris, F. C.; Lee, S.; Bindley, U. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 3, 05.2000, p. 1443-1447.

Research output: Contribution to journal › Article › peer-review

@article{a53781794d494f33b08c36902e4823c7,

title = "Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys",

abstract = "The composition and the thickness of II-VI semiconductor ternary alloys is determined simultaneously using the prism coupler technique. This approach, which determines the indices of refraction n with high precision and also the epilayer thicknesses with an uncertainty of less than 0.5%, has been applied to a series of molecular-beam epitaxy grown ternary alloy families, Zn1-xCdxSe, Zn1-xMgxSe, Zn1-xBexSe, Zn1-xMnxSe, and ZnSe1-xTex. It can generate a calibration between n and the alloy composition and the growth rates are obtained concurrently.",

author = "Peiris, {F. C.} and S. Lee and U. Bindley and Furdyna, {J. K.}",

year = "2000",

month = may,

doi = "10.1116/1.591400",

language = "English",

volume = "18",

pages = "1443--1447",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys

AU - Peiris, F. C.

AU - Lee, S.

AU - Bindley, U.

AU - Furdyna, J. K.

PY - 2000/5

Y1 - 2000/5

N2 - The composition and the thickness of II-VI semiconductor ternary alloys is determined simultaneously using the prism coupler technique. This approach, which determines the indices of refraction n with high precision and also the epilayer thicknesses with an uncertainty of less than 0.5%, has been applied to a series of molecular-beam epitaxy grown ternary alloy families, Zn1-xCdxSe, Zn1-xMgxSe, Zn1-xBexSe, Zn1-xMnxSe, and ZnSe1-xTex. It can generate a calibration between n and the alloy composition and the growth rates are obtained concurrently.

AB - The composition and the thickness of II-VI semiconductor ternary alloys is determined simultaneously using the prism coupler technique. This approach, which determines the indices of refraction n with high precision and also the epilayer thicknesses with an uncertainty of less than 0.5%, has been applied to a series of molecular-beam epitaxy grown ternary alloy families, Zn1-xCdxSe, Zn1-xMgxSe, Zn1-xBexSe, Zn1-xMnxSe, and ZnSe1-xTex. It can generate a calibration between n and the alloy composition and the growth rates are obtained concurrently.

UR - http://www.scopus.com/inward/record.url?scp=0034187285&partnerID=8YFLogxK

U2 - 10.1116/1.591400

DO - 10.1116/1.591400

M3 - Article

AN - SCOPUS:0034187285

SN - 1071-1023

VL - 18

SP - 1443

EP - 1447

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this