Precise control of nanoscale spacing between electrodes using different natured self-assembled monolayers

Young Jun You, Yongjin Kim, Hyeunseok Cheun, Changhwan Shin, Do Young Kim, Jae Hak Lee, Joon Yub Song, Jae Woo Lee, Sae Youn Lee, Byeong Kwon Ju, Jae Won Shim

Research output: Contribution to journalArticlepeer-review


Herein, we introduce an interdigitated horizontal electrode (IHE) structure with a metal-based electron-collecting (or -injecting) electrode and a hole-collecting (or -injecting) electrode composed of a conductive polymeric material that has a nanoscale distance and is horizontally separated. In the IHE, a metal electrode is fabricated on a silicon-oxide substrate, and a self-assembled monolayer (SAM) is selectively bonded to the metal and the oxide to form a conductive polymer electrode by dip coating. Each of the SAM materials is composed of a head part bonded to the substrate surface and a tail part that is hydrophilic or hydrophobic. This inherent property makes the metal electrode hydrophobic and the oxide substrate hydrophilic. Ag is used as a metal electrode material and is combined with alkanethiol SAMs. The alkylsilane SAMs are combined with the silicon oxide substrate to make them hydrophilic, using poly (3, 4-ethylenedioxythiophene)-poly (PEDOT: PSS) as the conductive polymer material. In this study, we have found that there is a difference in the spacing between the two electrodes that depends on the combination of SAM materials. Each interval was spaced from a minimum of 140 nm to a maximum of 385 nm.

Original languageEnglish
Article number265302
Issue number26
Publication statusPublished - 2019 Apr 12

Bibliographical note

Publisher Copyright:
© 2019 IOP Publishing Ltd.


  • dip coating
  • interdigitated horizontal electrode (IHE)
  • nanoscale spacing
  • self-assembled monolayers (SAMs)
  • surface energy

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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