We report the effect of oxidation on PbS quantum dot (QD) photodetectors using rapid thermal annealing (RTA) and furnace annealing in air at different durations and temperatures. Air-annealed QD films using RTA had an improved specific detectivity of up to 1.51 × 1012 Jones with a responsivity of up to 1.895 × 103 A/W at 1 kHz. We used transient photocurrent decay measurements, X-ray photoelectron spectroscopy, and frequency response measurements to investigate the origin of this effect. We found that short-term annealing with RTA in air increases the product of carrier mobility and carrier lifetime (μτ) of the QD photoconductors, which leads to high photoconductive gain and bandwidth.
|Number of pages||6|
|Journal||ACS Applied Nano Materials|
|Publication status||Published - 2021 Jan 22|
- PbS quantum dots
- infrared photodetectors
ASJC Scopus subject areas
- Materials Science(all)