Precise Control of the Oxidation State of PbS Quantum Dots Using Rapid Thermal Annealing for Infrared Photodetectors

Junyoung Jin; Jihoon Kyhm; Do Kyung Hwang; Kyeong Seok Lee; Tae Yeon Seong; Gyu Weon Hwang

doi:10.1021/acsanm.0c02712

Precise Control of the Oxidation State of PbS Quantum Dots Using Rapid Thermal Annealing for Infrared Photodetectors

Junyoung Jin, Jihoon Kyhm, Do Kyung Hwang, Kyeong Seok Lee, Tae Yeon Seong, Gyu Weon Hwang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report the effect of oxidation on PbS quantum dot (QD) photodetectors using rapid thermal annealing (RTA) and furnace annealing in air at different durations and temperatures. Air-annealed QD films using RTA had an improved specific detectivity of up to 1.51 × 1012 Jones with a responsivity of up to 1.895 × 103 A/W at 1 kHz. We used transient photocurrent decay measurements, X-ray photoelectron spectroscopy, and frequency response measurements to investigate the origin of this effect. We found that short-term annealing with RTA in air increases the product of carrier mobility and carrier lifetime (μτ) of the QD photoconductors, which leads to high photoconductive gain and bandwidth.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	ACS Applied Nano Materials
Volume	4
Issue number	1
DOIs	https://doi.org/10.1021/acsanm.0c02712
Publication status	Published - 2021 Jan 22

Keywords

PbS quantum dots
RTA
annealing
infrared photodetectors
oxidation

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1021/acsanm.0c02712

Cite this

@article{37a6b035e13f486fa285b4ab4aa32944,

title = "Precise Control of the Oxidation State of PbS Quantum Dots Using Rapid Thermal Annealing for Infrared Photodetectors",

abstract = "We report the effect of oxidation on PbS quantum dot (QD) photodetectors using rapid thermal annealing (RTA) and furnace annealing in air at different durations and temperatures. Air-annealed QD films using RTA had an improved specific detectivity of up to 1.51 × 1012 Jones with a responsivity of up to 1.895 × 103 A/W at 1 kHz. We used transient photocurrent decay measurements, X-ray photoelectron spectroscopy, and frequency response measurements to investigate the origin of this effect. We found that short-term annealing with RTA in air increases the product of carrier mobility and carrier lifetime (μτ) of the QD photoconductors, which leads to high photoconductive gain and bandwidth.",

keywords = "PbS quantum dots, RTA, annealing, infrared photodetectors, oxidation",

author = "Junyoung Jin and Jihoon Kyhm and Hwang, {Do Kyung} and Lee, {Kyeong Seok} and Seong, {Tae Yeon} and Hwang, {Gyu Weon}",

note = "Funding Information: J.J., D.K.H., and G.W.H. are thankful for financial support from the KIST Institution Program (No. 2E30100) and National Research Foundation of Korea (Grant 2019R1A2B5B02003419). Publisher Copyright: {\textcopyright} ",

year = "2021",

month = jan,

day = "22",

doi = "10.1021/acsanm.0c02712",

language = "English",

volume = "4",

pages = "1--6",

journal = "ACS Applied Nano Materials",

issn = "2574-0970",

publisher = "American Chemical Society",

number = "1",

}

TY - JOUR

T1 - Precise Control of the Oxidation State of PbS Quantum Dots Using Rapid Thermal Annealing for Infrared Photodetectors

AU - Jin, Junyoung

AU - Kyhm, Jihoon

AU - Hwang, Do Kyung

AU - Lee, Kyeong Seok

AU - Seong, Tae Yeon

AU - Hwang, Gyu Weon

N1 - Funding Information: J.J., D.K.H., and G.W.H. are thankful for financial support from the KIST Institution Program (No. 2E30100) and National Research Foundation of Korea (Grant 2019R1A2B5B02003419). Publisher Copyright: ©

PY - 2021/1/22

Y1 - 2021/1/22

N2 - We report the effect of oxidation on PbS quantum dot (QD) photodetectors using rapid thermal annealing (RTA) and furnace annealing in air at different durations and temperatures. Air-annealed QD films using RTA had an improved specific detectivity of up to 1.51 × 1012 Jones with a responsivity of up to 1.895 × 103 A/W at 1 kHz. We used transient photocurrent decay measurements, X-ray photoelectron spectroscopy, and frequency response measurements to investigate the origin of this effect. We found that short-term annealing with RTA in air increases the product of carrier mobility and carrier lifetime (μτ) of the QD photoconductors, which leads to high photoconductive gain and bandwidth.

AB - We report the effect of oxidation on PbS quantum dot (QD) photodetectors using rapid thermal annealing (RTA) and furnace annealing in air at different durations and temperatures. Air-annealed QD films using RTA had an improved specific detectivity of up to 1.51 × 1012 Jones with a responsivity of up to 1.895 × 103 A/W at 1 kHz. We used transient photocurrent decay measurements, X-ray photoelectron spectroscopy, and frequency response measurements to investigate the origin of this effect. We found that short-term annealing with RTA in air increases the product of carrier mobility and carrier lifetime (μτ) of the QD photoconductors, which leads to high photoconductive gain and bandwidth.

KW - PbS quantum dots

KW - RTA

KW - annealing

KW - infrared photodetectors

KW - oxidation

UR - http://www.scopus.com/inward/record.url?scp=85099976109&partnerID=8YFLogxK

U2 - 10.1021/acsanm.0c02712

DO - 10.1021/acsanm.0c02712

M3 - Article

AN - SCOPUS:85099976109

SN - 2574-0970

VL - 4

SP - 1

EP - 6

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 1

ER -

Precise Control of the Oxidation State of PbS Quantum Dots Using Rapid Thermal Annealing for Infrared Photodetectors

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this