Abstract
The planar Hall effect (PHE) and magnetoresistance (MR) measurements have been carried out on a GaMnAs ferromagnetic semiconductor. The PHE and MR spectra exhibit interesting two-step magnetization switching behavior arising from the magnetic anisotropy properties of the system. By fitting the angle-dependent planar Hall resistance (PHR) data taken at 5 kG with the Stoner-Wohlfarth model, the cubic and uniaxial anisotropy constants were independently obtained. The anisotropy constants lead to the precise determination of easy axis direction, which turns out to be in good agreement with the easy axis determined from the angular plot of the switching field. The domain pinning energies were further obtained by fitting the angle dependence of the switching field, including the effect of uniaxial anisotropy.
Original language | English |
---|---|
Pages (from-to) | 3025-3027 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 43 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2007 Jun |
Bibliographical note
Funding Information:This work was supported in part by NSF Grants DMR06-03752; by the Korea Research Foundation Grant (KRF-2004-005-C00068); and by the Seoul Research & Development Business Program.
Keywords
- (Ga,Mn)As
- Magnetic anisotropy
- Magnetic semiconductor
- Magnetoresistance
- Pinning energy
- Planar Hall effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering