TY - JOUR
T1 - Precise measurements of the dispersion of the index of refraction for Cd1-xZnxTe alloys
AU - Peiris, F. C.
AU - Lee, S.
AU - Bindley, U.
AU - Furdyna, J. K.
N1 - Funding Information:
This work was supported by the National Science Foundation Grant DMR97-05064. The authors thank Professor Carol Tanner and V. Gerginov for making available the 852.3 nm laser, and for their help in adapting the laser to our prism coupler setup. We also thank John Jackson of Metricon Corporation for invaluable suggestions concerning the prism coupling technique.
PY - 2000/6
Y1 - 2000/6
N2 - By using a prism coupler technique in conjunction with reflectivity measurements, we have obtained highly accurate relations for the dispersion of the indices of refraction n for a series of MBE-grown Cd1-xZnxTe alloys. Initially, the prism coupler technique was used to determine n at discrete wavelengths with an accuracy of at least 0.1%, and also to concurrently determine the epilayer thicknesses with an uncertainty of less than 0.5%. Having obtained precise values for both n (at discrete wavelengths) and the thicknesses of the Cd1-xZnxTe epilayers, we were then able to correctly decipher the values for n at the maxima and minima of the reflectivity spectra observed on the above epilayers, and thereby generate a continuous variation of the indices of refraction as a function of wavelength. Fitting the dispersion of n in each alloy to a Sellmeier-type dispersion relation, we have obtained the dependence of the constants appearing in this relation on the alloy concentration. This enables one to predict n not only as a function of wavelength, but also as a function of alloy composition.
AB - By using a prism coupler technique in conjunction with reflectivity measurements, we have obtained highly accurate relations for the dispersion of the indices of refraction n for a series of MBE-grown Cd1-xZnxTe alloys. Initially, the prism coupler technique was used to determine n at discrete wavelengths with an accuracy of at least 0.1%, and also to concurrently determine the epilayer thicknesses with an uncertainty of less than 0.5%. Having obtained precise values for both n (at discrete wavelengths) and the thicknesses of the Cd1-xZnxTe epilayers, we were then able to correctly decipher the values for n at the maxima and minima of the reflectivity spectra observed on the above epilayers, and thereby generate a continuous variation of the indices of refraction as a function of wavelength. Fitting the dispersion of n in each alloy to a Sellmeier-type dispersion relation, we have obtained the dependence of the constants appearing in this relation on the alloy concentration. This enables one to predict n not only as a function of wavelength, but also as a function of alloy composition.
UR - http://www.scopus.com/inward/record.url?scp=0033686785&partnerID=8YFLogxK
U2 - 10.1007/s11664-000-0227-9
DO - 10.1007/s11664-000-0227-9
M3 - Article
AN - SCOPUS:0033686785
SN - 0361-5235
VL - 29
SP - 798
EP - 803
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 6
ER -