Prediction of Si contents to suppress the formation of Al₄C₃ in the SiC_p/Al composite

Interfacial phenomena in the SiC_p/Al composite were investigated using SEM, DSC, AES, and XRD. The value of these combined techniques in elucidating detailed interfacial phenomena was demonstrated. Theoretical calculations of equilibrium Si contents required to prevent the formation of Al₄C₃ in the SiC/Al composite were performed by taking the variations in Al and Si activities as well as those of other compounds into account for the calculations. Based on calculations, there exists a transition temperature at which a sudden increase in equilibrium Si contents required to prevent Al₄C₃ formation occurs. Experimental measurements of equilibrium Si contents were also performed to confirm the theoretical results.