Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

Yiming Li; David Mann; Marco Rolandi; Woong Kim; Ant Ural; Steven Hung; Ali Javey; Jien Cao; Dunwei Wang; Erhan Yenilmez; Qian Wang; James F. Gibbons; Yoshio Nishi; Hongjie Dai

doi:10.1021/nl035097c

Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

Yiming Li, David Mann, Marco Rolandi, Woong Kim, Ant Ural, Steven Hung, Ali Javey, Jien Cao, Dunwei Wang, Erhan Yenilmez, Qian Wang, James F. Gibbons, Yoshio Nishi, Hongjie Dai

Research output: Contribution to journal › Article › peer-review

493 Citations (Scopus)

Abstract

Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600°C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of the nanotubes are semiconductors and thus highly preferential growth of semiconducting over metallic tubes in the PECVD process. Control experiments with other nanotube materials find that HiPco nanotubes consist of ∼61% semiconductors, while laser ablation preferentially grows metallic SWNTs (∼70%). The characterization method used here should also be applicable to assessing the degree of chemical separation of metallic and semiconducting nanotubes.

Original language	English
Pages (from-to)	317-321
Number of pages	5
Journal	Nano Letters
Volume	4
Issue number	2
DOIs	https://doi.org/10.1021/nl035097c
Publication status	Published - 2004 Feb
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl035097c

Cite this

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title = "Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method",

abstract = "Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600°C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of the nanotubes are semiconductors and thus highly preferential growth of semiconducting over metallic tubes in the PECVD process. Control experiments with other nanotube materials find that HiPco nanotubes consist of ∼61% semiconductors, while laser ablation preferentially grows metallic SWNTs (∼70%). The characterization method used here should also be applicable to assessing the degree of chemical separation of metallic and semiconducting nanotubes.",

author = "Yiming Li and David Mann and Marco Rolandi and Woong Kim and Ant Ural and Steven Hung and Ali Javey and Jien Cao and Dunwei Wang and Erhan Yenilmez and Qian Wang and Gibbons, {James F.} and Yoshio Nishi and Hongjie Dai",

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doi = "10.1021/nl035097c",

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T1 - Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

AU - Li, Yiming

AU - Mann, David

AU - Rolandi, Marco

AU - Kim, Woong

AU - Ural, Ant

AU - Hung, Steven

AU - Javey, Ali

AU - Cao, Jien

AU - Wang, Dunwei

AU - Yenilmez, Erhan

AU - Wang, Qian

AU - Gibbons, James F.

AU - Nishi, Yoshio

AU - Dai, Hongjie

PY - 2004/2

Y1 - 2004/2

N2 - Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600°C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of the nanotubes are semiconductors and thus highly preferential growth of semiconducting over metallic tubes in the PECVD process. Control experiments with other nanotube materials find that HiPco nanotubes consist of ∼61% semiconductors, while laser ablation preferentially grows metallic SWNTs (∼70%). The characterization method used here should also be applicable to assessing the degree of chemical separation of metallic and semiconducting nanotubes.

AB - Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600°C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of the nanotubes are semiconductors and thus highly preferential growth of semiconducting over metallic tubes in the PECVD process. Control experiments with other nanotube materials find that HiPco nanotubes consist of ∼61% semiconductors, while laser ablation preferentially grows metallic SWNTs (∼70%). The characterization method used here should also be applicable to assessing the degree of chemical separation of metallic and semiconducting nanotubes.

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JO - Nano Letters

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Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

Abstract

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