Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films

Kyoungwon Kim; Yong Won Song; Jaehyeon Leem; Sang Yeol Lee; Sangsig Kim

doi:10.3938/jkps.55.140

Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films

Kyoungwon Kim, Yong Won Song, Jaehyeon Leem, Sang Yeol Lee, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects, which can provide deleterious current paths, are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and 1 x 10^-12A, respectively.

Original language	English
Pages (from-to)	140-143
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	1
DOIs	https://doi.org/10.3938/jkps.55.140
Publication status	Published - 2009 Jul

Keywords

Schottky diode
Sol-gel
Thin films
ZnO

ASJC Scopus subject areas

General Physics and Astronomy

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10.3938/jkps.55.140

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title = "Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films",

abstract = "We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects, which can provide deleterious current paths, are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and 1 x 10-12A, respectively.",

keywords = "Schottky diode, Sol-gel, Thin films, ZnO",

author = "Kyoungwon Kim and Song, {Yong Won} and Jaehyeon Leem and Lee, {Sang Yeol} and Sangsig Kim",

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T1 - Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films

AU - Kim, Kyoungwon

AU - Song, Yong Won

AU - Leem, Jaehyeon

AU - Lee, Sang Yeol

AU - Kim, Sangsig

PY - 2009/7

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N2 - We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects, which can provide deleterious current paths, are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and 1 x 10-12A, respectively.

AB - We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects, which can provide deleterious current paths, are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and 1 x 10-12A, respectively.

KW - Schottky diode

KW - Sol-gel

KW - Thin films

KW - ZnO

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Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films

Abstract

Keywords

ASJC Scopus subject areas

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