Preparation and properties of PGO thin films by PLD

Sang Mo Koo; Li Rong Zheng; Qing Rui Yin; Byung Moo Moon; K. V. Rao

doi:10.1080/00150199908009132

Preparation and properties of PGO thin films by PLD

Sang Mo Koo, Li Rong Zheng, Qing Rui Yin, Byung Moo Moon, K. V. Rao

Research output: Contribution to journal › Article › peer-review

Abstract

Lead germanate, Pb₅Ge₃O₁₁ (PGO), is known to be ferroelectric with a large pyroelectric property and relatively small dielectric constant. In this paper, we investigated the optimal conditions for the c-axis oriented PGO thin films. The effectiveness of oxygen (O₂) as an oxidizing agent during in-situ growth of PGO thin films on YBCO/LaAlO₃(100) substrates is studied as a function of substrate temperature. Films with c-axis preferred orient can be obtained at a substrate temperature of 650°C for 20min with oxygen pressure 26.6 Pa followed by subsequent annealing temperature at 400°C for 30min to keep good YBCO layers.

Original language	English
Pages (from-to)	245-252
Number of pages	8
Journal	Ferroelectrics
Volume	225
Issue number	1-4
DOIs	https://doi.org/10.1080/00150199908009132
Publication status	Published - 1999

Bibliographical note

Funding Information:
This research is supported by the Swedish funding agency NUTEK.

Keywords

Laser ablation
PbGeO (PGO)
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150199908009132

Cite this

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title = "Preparation and properties of PGO thin films by PLD",

abstract = "Lead germanate, Pb5Ge3O11 (PGO), is known to be ferroelectric with a large pyroelectric property and relatively small dielectric constant. In this paper, we investigated the optimal conditions for the c-axis oriented PGO thin films. The effectiveness of oxygen (O2) as an oxidizing agent during in-situ growth of PGO thin films on YBCO/LaAlO3(100) substrates is studied as a function of substrate temperature. Films with c-axis preferred orient can be obtained at a substrate temperature of 650°C for 20min with oxygen pressure 26.6 Pa followed by subsequent annealing temperature at 400°C for 30min to keep good YBCO layers.",

keywords = "Laser ablation, PbGeO (PGO), Thin film",

author = "Koo, {Sang Mo} and Zheng, {Li Rong} and Yin, {Qing Rui} and Moon, {Byung Moo} and Rao, {K. V.}",

note = "Funding Information: This research is supported by the Swedish funding agency NUTEK.",

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doi = "10.1080/00150199908009132",

language = "English",

volume = "225",

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journal = "Ferroelectrics",

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T1 - Preparation and properties of PGO thin films by PLD

AU - Koo, Sang Mo

AU - Zheng, Li Rong

AU - Yin, Qing Rui

AU - Moon, Byung Moo

AU - Rao, K. V.

N1 - Funding Information: This research is supported by the Swedish funding agency NUTEK.

PY - 1999

Y1 - 1999

N2 - Lead germanate, Pb5Ge3O11 (PGO), is known to be ferroelectric with a large pyroelectric property and relatively small dielectric constant. In this paper, we investigated the optimal conditions for the c-axis oriented PGO thin films. The effectiveness of oxygen (O2) as an oxidizing agent during in-situ growth of PGO thin films on YBCO/LaAlO3(100) substrates is studied as a function of substrate temperature. Films with c-axis preferred orient can be obtained at a substrate temperature of 650°C for 20min with oxygen pressure 26.6 Pa followed by subsequent annealing temperature at 400°C for 30min to keep good YBCO layers.

AB - Lead germanate, Pb5Ge3O11 (PGO), is known to be ferroelectric with a large pyroelectric property and relatively small dielectric constant. In this paper, we investigated the optimal conditions for the c-axis oriented PGO thin films. The effectiveness of oxygen (O2) as an oxidizing agent during in-situ growth of PGO thin films on YBCO/LaAlO3(100) substrates is studied as a function of substrate temperature. Films with c-axis preferred orient can be obtained at a substrate temperature of 650°C for 20min with oxygen pressure 26.6 Pa followed by subsequent annealing temperature at 400°C for 30min to keep good YBCO layers.

KW - Laser ablation

KW - PbGeO (PGO)

KW - Thin film

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JO - Ferroelectrics

JF - Ferroelectrics

IS - 1-4

ER -

Preparation and properties of PGO thin films by PLD

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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