Preparation of Cu2ZnSnS4 thin films via electrochemical deposition and rapid thermal annealing

Kee Doo Lee; Se Won Seo; Doh Kwon Lee; Honggon Kim; Jeung Hyun Jeong; Min Jae Ko; Bong Soo Kim; Dong Hwan Kim; Jin Young Kim

doi:10.1016/j.tsf.2013.02.051

Preparation of Cu₂ZnSnS₄ thin films via electrochemical deposition and rapid thermal annealing

Kee Doo Lee, Se Won Seo, Doh Kwon Lee, Honggon Kim, Jeung Hyun Jeong, Min Jae Ko, Bong Soo Kim, Dong Hwan Kim, Jin Young Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

We fabricated metallic Cu-Zn-Sn (CZT) precursor thin films via electrochemical deposition fromaqueous metal salt solution on Mo-coated soda-lime glass substrates, and the influence of the subsequent sulfurization condition on the morphology, compositionand structure of the final Cu ₂ZnSnS₄ (CZTS) thin films was investigated. A rapid thermal annealing equipment was used for a systematic control of the sulfurization process parameters. The as-deposited films are composed of binary metallic alloys, which can be converted to the highly crystalline CZTS phase after sulfurization at temperatures above 500 °C. The composition of the CZT film barely changes during the sulfurization, and a small amount of CuS-based secondary phases exists evenat 550 °C. However, a quick post-annealing KCN treatment effectively and selectively removes the secondary phase, evidenced by the Raman spectroscopy and elemental.

Original language	English
Pages (from-to)	294-298
Number of pages	5
Journal	Thin Solid Films
Volume	546
DOIs	https://doi.org/10.1016/j.tsf.2013.02.051
Publication status	Published - 2013 Nov 1

Bibliographical note

Funding Information:
The work done at KIST was supported by the KIST internal fund and the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (no. 20113020010040 ). The work done at Green School was supported by the National Research Foundation of Korea Grant funded by the Korean Government (MEST) ' (2012, University-Institute cooperation program). This work is also supported by Nano∙Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2012M3A7B4049989 ).

Keywords

Electrochemical deposition
RTA
Sulfurization
Thin film solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2013.02.051

Cite this

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title = "Preparation of Cu2ZnSnS4 thin films via electrochemical deposition and rapid thermal annealing",

abstract = "We fabricated metallic Cu-Zn-Sn (CZT) precursor thin films via electrochemical deposition fromaqueous metal salt solution on Mo-coated soda-lime glass substrates, and the influence of the subsequent sulfurization condition on the morphology, compositionand structure of the final Cu 2ZnSnS4 (CZTS) thin films was investigated. A rapid thermal annealing equipment was used for a systematic control of the sulfurization process parameters. The as-deposited films are composed of binary metallic alloys, which can be converted to the highly crystalline CZTS phase after sulfurization at temperatures above 500 °C. The composition of the CZT film barely changes during the sulfurization, and a small amount of CuS-based secondary phases exists evenat 550 °C. However, a quick post-annealing KCN treatment effectively and selectively removes the secondary phase, evidenced by the Raman spectroscopy and elemental.",

keywords = "Electrochemical deposition, RTA, Sulfurization, Thin film solar cell",

author = "Lee, {Kee Doo} and Seo, {Se Won} and Lee, {Doh Kwon} and Honggon Kim and Jeong, {Jeung Hyun} and Ko, {Min Jae} and Kim, {Bong Soo} and Kim, {Dong Hwan} and Kim, {Jin Young}",

note = "Funding Information: The work done at KIST was supported by the KIST internal fund and the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (no. 20113020010040 ). The work done at Green School was supported by the National Research Foundation of Korea Grant funded by the Korean Government (MEST) ' (2012, University-Institute cooperation program). This work is also supported by Nano∙Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2012M3A7B4049989 ).",

year = "2013",

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doi = "10.1016/j.tsf.2013.02.051",

language = "English",

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journal = "Thin Solid Films",

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T1 - Preparation of Cu2ZnSnS4 thin films via electrochemical deposition and rapid thermal annealing

AU - Lee, Kee Doo

AU - Seo, Se Won

AU - Lee, Doh Kwon

AU - Kim, Honggon

AU - Jeong, Jeung Hyun

AU - Ko, Min Jae

AU - Kim, Bong Soo

AU - Kim, Dong Hwan

AU - Kim, Jin Young

N1 - Funding Information: The work done at KIST was supported by the KIST internal fund and the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (no. 20113020010040 ). The work done at Green School was supported by the National Research Foundation of Korea Grant funded by the Korean Government (MEST) ' (2012, University-Institute cooperation program). This work is also supported by Nano∙Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2012M3A7B4049989 ).

PY - 2013/11/1

Y1 - 2013/11/1

N2 - We fabricated metallic Cu-Zn-Sn (CZT) precursor thin films via electrochemical deposition fromaqueous metal salt solution on Mo-coated soda-lime glass substrates, and the influence of the subsequent sulfurization condition on the morphology, compositionand structure of the final Cu 2ZnSnS4 (CZTS) thin films was investigated. A rapid thermal annealing equipment was used for a systematic control of the sulfurization process parameters. The as-deposited films are composed of binary metallic alloys, which can be converted to the highly crystalline CZTS phase after sulfurization at temperatures above 500 °C. The composition of the CZT film barely changes during the sulfurization, and a small amount of CuS-based secondary phases exists evenat 550 °C. However, a quick post-annealing KCN treatment effectively and selectively removes the secondary phase, evidenced by the Raman spectroscopy and elemental.

AB - We fabricated metallic Cu-Zn-Sn (CZT) precursor thin films via electrochemical deposition fromaqueous metal salt solution on Mo-coated soda-lime glass substrates, and the influence of the subsequent sulfurization condition on the morphology, compositionand structure of the final Cu 2ZnSnS4 (CZTS) thin films was investigated. A rapid thermal annealing equipment was used for a systematic control of the sulfurization process parameters. The as-deposited films are composed of binary metallic alloys, which can be converted to the highly crystalline CZTS phase after sulfurization at temperatures above 500 °C. The composition of the CZT film barely changes during the sulfurization, and a small amount of CuS-based secondary phases exists evenat 550 °C. However, a quick post-annealing KCN treatment effectively and selectively removes the secondary phase, evidenced by the Raman spectroscopy and elemental.

KW - Electrochemical deposition

KW - RTA

KW - Sulfurization

KW - Thin film solar cell

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