Preparation of Pb(Zr0.35Ti0.65)O3 films on conducting oxide ga-doped zno films for transparent ferroelectric thin-film transistors

Kwang Bae Lee, Kyung Haeng Lee, Byeung Kwon Ju

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    We have investigated the feasibility of the deposition of ferroelectric PZT films on transparent conducting Ga-doped ZnO (GZO) films, for transparent ferroelectric thin-film transistors. Low resistive and high c-axis oriented GZO films are prepared at the substrate temperature of 250°C using the dc magnetron sputtering method. PZT films are deposited at low substrate temperature and subsequently crystallized by means of the rapid annealing process in a high vacuum to minimize the reaction of PZT with GZO films. Various vacuum-annealing conditions are investigated to get high-quality PZT films, which show single perovskite phase with a random orientation. The optimized PZT/GZO capacitors have somewhat unsaturated P-E hysteresis loops with the values of remanent polarization and coercive field of about 4.5 μC/cm 2 and 145 kV/cm, respectively.

    Original languageEnglish
    Pages (from-to)159-168
    Number of pages10
    JournalIntegrated Ferroelectrics
    Volume84
    Issue number1
    DOIs
    Publication statusPublished - 2006

    Keywords

    • Ferroelectric PZT films
    • Transparent TFTs
    • Transparent conducting Ga-doped ZnO (GZO)
    • Vacuum-annealing process

    ASJC Scopus subject areas

    • Control and Systems Engineering
    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Fingerprint

    Dive into the research topics of 'Preparation of Pb(Zr0.35Ti0.65)O3 films on conducting oxide ga-doped zno films for transparent ferroelectric thin-film transistors'. Together they form a unique fingerprint.

    Cite this