Abstract
We have investigated the feasibility of the deposition of ferroelectric PZT films on transparent conducting Ga-doped ZnO (GZO) films, for transparent ferroelectric thin-film transistors. Low resistive and high c-axis oriented GZO films are prepared at the substrate temperature of 250°C using the dc magnetron sputtering method. PZT films are deposited at low substrate temperature and subsequently crystallized by means of the rapid annealing process in a high vacuum to minimize the reaction of PZT with GZO films. Various vacuum-annealing conditions are investigated to get high-quality PZT films, which show single perovskite phase with a random orientation. The optimized PZT/GZO capacitors have somewhat unsaturated P-E hysteresis loops with the values of remanent polarization and coercive field of about 4.5 μC/cm 2 and 145 kV/cm, respectively.
Original language | English |
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Pages (from-to) | 159-168 |
Number of pages | 10 |
Journal | Integrated Ferroelectrics |
Volume | 84 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2006 |
Keywords
- Ferroelectric PZT films
- Transparent TFTs
- Transparent conducting Ga-doped ZnO (GZO)
- Vacuum-annealing process
ASJC Scopus subject areas
- Control and Systems Engineering
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry