Preparation of Pb(Zr0.35Ti0.65)O3 films on conducting oxide ga-doped zno films for transparent ferroelectric thin-film transistors

Kwang Bae Lee; Kyung Haeng Lee; Byeung Kwon Ju

doi:10.1080/10584580601085719

Preparation of Pb(Zr_0.35Ti_0.65)O₃ films on conducting oxide ga-doped zno films for transparent ferroelectric thin-film transistors

Kwang Bae Lee, Kyung Haeng Lee, Byeung Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have investigated the feasibility of the deposition of ferroelectric PZT films on transparent conducting Ga-doped ZnO (GZO) films, for transparent ferroelectric thin-film transistors. Low resistive and high c-axis oriented GZO films are prepared at the substrate temperature of 250°C using the dc magnetron sputtering method. PZT films are deposited at low substrate temperature and subsequently crystallized by means of the rapid annealing process in a high vacuum to minimize the reaction of PZT with GZO films. Various vacuum-annealing conditions are investigated to get high-quality PZT films, which show single perovskite phase with a random orientation. The optimized PZT/GZO capacitors have somewhat unsaturated P-E hysteresis loops with the values of remanent polarization and coercive field of about 4.5 μC/cm ² and 145 kV/cm, respectively.

Original language	English
Pages (from-to)	159-168
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	84
Issue number	1
DOIs	https://doi.org/10.1080/10584580601085719
Publication status	Published - 2006

Keywords

Ferroelectric PZT films
Transparent TFTs
Transparent conducting Ga-doped ZnO (GZO)
Vacuum-annealing process

ASJC Scopus subject areas

Control and Systems Engineering
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584580601085719

Cite this

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title = "Preparation of Pb(Zr0.35Ti0.65)O3 films on conducting oxide ga-doped zno films for transparent ferroelectric thin-film transistors",

abstract = "We have investigated the feasibility of the deposition of ferroelectric PZT films on transparent conducting Ga-doped ZnO (GZO) films, for transparent ferroelectric thin-film transistors. Low resistive and high c-axis oriented GZO films are prepared at the substrate temperature of 250°C using the dc magnetron sputtering method. PZT films are deposited at low substrate temperature and subsequently crystallized by means of the rapid annealing process in a high vacuum to minimize the reaction of PZT with GZO films. Various vacuum-annealing conditions are investigated to get high-quality PZT films, which show single perovskite phase with a random orientation. The optimized PZT/GZO capacitors have somewhat unsaturated P-E hysteresis loops with the values of remanent polarization and coercive field of about 4.5 μC/cm 2 and 145 kV/cm, respectively.",

keywords = "Ferroelectric PZT films, Transparent TFTs, Transparent conducting Ga-doped ZnO (GZO), Vacuum-annealing process",

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N2 - We have investigated the feasibility of the deposition of ferroelectric PZT films on transparent conducting Ga-doped ZnO (GZO) films, for transparent ferroelectric thin-film transistors. Low resistive and high c-axis oriented GZO films are prepared at the substrate temperature of 250°C using the dc magnetron sputtering method. PZT films are deposited at low substrate temperature and subsequently crystallized by means of the rapid annealing process in a high vacuum to minimize the reaction of PZT with GZO films. Various vacuum-annealing conditions are investigated to get high-quality PZT films, which show single perovskite phase with a random orientation. The optimized PZT/GZO capacitors have somewhat unsaturated P-E hysteresis loops with the values of remanent polarization and coercive field of about 4.5 μC/cm 2 and 145 kV/cm, respectively.

AB - We have investigated the feasibility of the deposition of ferroelectric PZT films on transparent conducting Ga-doped ZnO (GZO) films, for transparent ferroelectric thin-film transistors. Low resistive and high c-axis oriented GZO films are prepared at the substrate temperature of 250°C using the dc magnetron sputtering method. PZT films are deposited at low substrate temperature and subsequently crystallized by means of the rapid annealing process in a high vacuum to minimize the reaction of PZT with GZO films. Various vacuum-annealing conditions are investigated to get high-quality PZT films, which show single perovskite phase with a random orientation. The optimized PZT/GZO capacitors have somewhat unsaturated P-E hysteresis loops with the values of remanent polarization and coercive field of about 4.5 μC/cm 2 and 145 kV/cm, respectively.

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