Preparation of Pb(Zr_0.35Ti_0.65)O₃ films on conducting oxide ga-doped zno films for transparent ferroelectric thin-film transistors

Keyphrases

• ZnO Film 100%
• Ga Doping 100%
• Ga-doped ZnO Film 100%
• Conducting Oxide 100%
• PZT Film 100%
• Ferroelectric Thin-film Transistors 100%
• Coercive Field 33%
• Annealing Process 33%
• High Vacuum 33%
• Capacitors 33%
• Magnetron Sputtering Deposition 33%
• Substrate Temperature 33%
• Vacuum Annealing 33%
• Perovskite 33%
• C-axis Orientation 33%
• Ga-doped ZnO 33%
• Annealing Conditions 33%
• Transparent Conducting 33%
• Low Substrate Temperature 33%
• Remanent Polarization 33%
• Polarization Field 33%
• Rapid Annealing 33%
• P-E Hysteresis Loop 33%
• Random Orientation 33%
• Ferroelectric PZT 33%
• Single Perovskite 33%
• DC Magnetron Sputtering 33%

Material Science

• Oxide Compound 100%
• Film 100%
• Thin-Film Transistor 100%
• Ferroelectric Thin Films 100%
• ZnO 50%
• Annealing 25%
• Ferroelectric Material 12%
• Magnetron Sputtering 12%
• Capacitor 12%