Preparation of piezoelectric 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 solid solution and thick films for low temperature firing on a Si-substrate

Tae Yun Kwon; Jae Hong Park; Yong Bum Kim; Dae Sung Yoon; Chae Il Cheon; Hong Lim Lee; Tae Song Kim

doi:10.1016/j.jcrysgro.2006.07.005

Preparation of piezoelectric 0.1Pb(Zn_0.5W_0.5)O₃-0.9Pb(Zr_0.5Ti_0.5)O₃ solid solution and thick films for low temperature firing on a Si-substrate

Tae Yun Kwon, Jae Hong Park, Yong Bum Kim, Dae Sung Yoon, Chae Il Cheon, Hong Lim Lee, Tae Song Kim

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A newly designed lead zirconate titanate (PZT) solid solution 0.1Pb(Zn_0.5W_0.5)O₃-0.9Pb(Zr_0.5Ti_0.5)O₃ was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO₂/SiN_x/Si-substrate through the screen printing method. A conventional screen printing thick film and a hybrid thick film (screen printing and PZT sol infiltration) was also compared. According to an SEM study, the prepared thick film showed a much denser microstructure with the sol infiltration method. The electrical properties of the prepared PZT solid solution and its thick film were predominantly realized in a low temperature region. The dielectric constant of a conventional screen printing thick film and the hybrid thick film (sintered at 900 °C), was 703.5 and 911.3, respectively.

Original language	English
Pages (from-to)	172-178
Number of pages	7
Journal	Journal of Crystal Growth
Volume	295
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.07.005
Publication status	Published - 2006 Oct 1
Externally published	Yes

Keywords

A3. Polycrystalline deposition
B1. Perovskites
B2. Dielectric materials
B2. Piezoelectric materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2006.07.005

Cite this

@article{a4d3b07c54b8425e88c8319d5fce4f3e,

title = "Preparation of piezoelectric 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 solid solution and thick films for low temperature firing on a Si-substrate",

abstract = "A newly designed lead zirconate titanate (PZT) solid solution 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/Si-substrate through the screen printing method. A conventional screen printing thick film and a hybrid thick film (screen printing and PZT sol infiltration) was also compared. According to an SEM study, the prepared thick film showed a much denser microstructure with the sol infiltration method. The electrical properties of the prepared PZT solid solution and its thick film were predominantly realized in a low temperature region. The dielectric constant of a conventional screen printing thick film and the hybrid thick film (sintered at 900 °C), was 703.5 and 911.3, respectively.",

keywords = "A3. Polycrystalline deposition, B1. Perovskites, B2. Dielectric materials, B2. Piezoelectric materials",

author = "Kwon, {Tae Yun} and Park, {Jae Hong} and Kim, {Yong Bum} and Yoon, {Dae Sung} and Cheon, {Chae Il} and Lee, {Hong Lim} and Kim, {Tae Song}",

note = "Funding Information: This work, under the contract project code MS-01-133-01, has been supported by the Intelligent Microsystem Center, which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.",

year = "2006",

month = oct,

day = "1",

doi = "10.1016/j.jcrysgro.2006.07.005",

language = "English",

volume = "295",

pages = "172--178",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Preparation of piezoelectric 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 solid solution and thick films for low temperature firing on a Si-substrate

AU - Kwon, Tae Yun

AU - Park, Jae Hong

AU - Kim, Yong Bum

AU - Yoon, Dae Sung

AU - Cheon, Chae Il

AU - Lee, Hong Lim

AU - Kim, Tae Song

N1 - Funding Information: This work, under the contract project code MS-01-133-01, has been supported by the Intelligent Microsystem Center, which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.

PY - 2006/10/1

Y1 - 2006/10/1

N2 - A newly designed lead zirconate titanate (PZT) solid solution 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/Si-substrate through the screen printing method. A conventional screen printing thick film and a hybrid thick film (screen printing and PZT sol infiltration) was also compared. According to an SEM study, the prepared thick film showed a much denser microstructure with the sol infiltration method. The electrical properties of the prepared PZT solid solution and its thick film were predominantly realized in a low temperature region. The dielectric constant of a conventional screen printing thick film and the hybrid thick film (sintered at 900 °C), was 703.5 and 911.3, respectively.

AB - A newly designed lead zirconate titanate (PZT) solid solution 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/Si-substrate through the screen printing method. A conventional screen printing thick film and a hybrid thick film (screen printing and PZT sol infiltration) was also compared. According to an SEM study, the prepared thick film showed a much denser microstructure with the sol infiltration method. The electrical properties of the prepared PZT solid solution and its thick film were predominantly realized in a low temperature region. The dielectric constant of a conventional screen printing thick film and the hybrid thick film (sintered at 900 °C), was 703.5 and 911.3, respectively.

KW - A3. Polycrystalline deposition

KW - B1. Perovskites

KW - B2. Dielectric materials

KW - B2. Piezoelectric materials

UR - http://www.scopus.com/inward/record.url?scp=33748962664&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2006.07.005

DO - 10.1016/j.jcrysgro.2006.07.005

M3 - Article

AN - SCOPUS:33748962664

SN - 0022-0248

VL - 295

SP - 172

EP - 178

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -