Present status and future directions of SiGe HBT technology

Marwan H. Khater; Thomas N. Adam; Rajendran Krishnasamy; Mattias E. Dahlstrom; Jae Sung Rieh; Kathryn T. Schonenberg; Bradly A. Orner; Francois Pagette; Kenneth Stein; David C. Ahlgren

doi:10.1142/S0129156407004254

Present status and future directions of SiGe HBT technology

Marwan H. Khater, Thomas N. Adam, Rajendran Krishnasamy, Mattias E. Dahlstrom, Jae Sung Rieh, Kathryn T. Schonenberg, Bradly A. Orner, Francois Pagette, Kenneth Stein, David C. Ahlgren

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The implementation of challenging novel materials and process techniques has led to remarkable device improvements in state-of-the-art high-performance SiGe HBTs, rivaling their III-V compound semiconductor counterparts. Vertical scaling, lateral scaling, and device structure innovations required to improve SiGe HBTs performance have benefited from advanced materials and process techniques developed for next generation CMOS technology. In this work, we present a review of recent process and materials development enabling operational speeds of SiGe HBTs approaching 400 GHz. In addition, we present device simulation results that show the extendibility of SiGe HBT technology performance towards half-terahertz and beyond with further scaling and device structure improvements.

Original language	English
Pages (from-to)	61-80
Number of pages	20
Journal	International Journal of High Speed Electronics and Systems
Volume	17
Issue number	1
DOIs	https://doi.org/10.1142/S0129156407004254
Publication status	Published - 2007 Mar

Bibliographical note

Funding Information:
The authors would like to acknowledge partial support of this work by DARPA under SPAWAR contract number N66001-02-C-8014. The authors also would like to thank Joseph Kocis, David Rockwell, Michael Longstreet, Karyn Hurley, and Robert Groves for their support in device process and test.

Keywords

Lateral scaling
Raised extrinsic base
Self-aligned structure
SiGe HBTs
Vertical scaling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1142/S0129156407004254

Cite this

@article{9a4c8bcd00964c6ba1160f3393eedf30,

title = "Present status and future directions of SiGe HBT technology",

abstract = "The implementation of challenging novel materials and process techniques has led to remarkable device improvements in state-of-the-art high-performance SiGe HBTs, rivaling their III-V compound semiconductor counterparts. Vertical scaling, lateral scaling, and device structure innovations required to improve SiGe HBTs performance have benefited from advanced materials and process techniques developed for next generation CMOS technology. In this work, we present a review of recent process and materials development enabling operational speeds of SiGe HBTs approaching 400 GHz. In addition, we present device simulation results that show the extendibility of SiGe HBT technology performance towards half-terahertz and beyond with further scaling and device structure improvements.",

keywords = "Lateral scaling, Raised extrinsic base, Self-aligned structure, SiGe HBTs, Vertical scaling",

author = "Khater, {Marwan H.} and Adam, {Thomas N.} and Rajendran Krishnasamy and Dahlstrom, {Mattias E.} and Rieh, {Jae Sung} and Schonenberg, {Kathryn T.} and Orner, {Bradly A.} and Francois Pagette and Kenneth Stein and Ahlgren, {David C.}",

note = "Funding Information: The authors would like to acknowledge partial support of this work by DARPA under SPAWAR contract number N66001-02-C-8014. The authors also would like to thank Joseph Kocis, David Rockwell, Michael Longstreet, Karyn Hurley, and Robert Groves for their support in device process and test.",

year = "2007",

month = mar,

doi = "10.1142/S0129156407004254",

language = "English",

volume = "17",

pages = "61--80",

journal = "International Journal of High Speed Electronics and Systems",

issn = "0129-1564",

publisher = "World Scientific Publishing Co. Pte Ltd",

number = "1",

}

TY - JOUR

T1 - Present status and future directions of SiGe HBT technology

AU - Khater, Marwan H.

AU - Adam, Thomas N.

AU - Krishnasamy, Rajendran

AU - Dahlstrom, Mattias E.

AU - Rieh, Jae Sung

AU - Schonenberg, Kathryn T.

AU - Orner, Bradly A.

AU - Pagette, Francois

AU - Stein, Kenneth

AU - Ahlgren, David C.

N1 - Funding Information: The authors would like to acknowledge partial support of this work by DARPA under SPAWAR contract number N66001-02-C-8014. The authors also would like to thank Joseph Kocis, David Rockwell, Michael Longstreet, Karyn Hurley, and Robert Groves for their support in device process and test.

PY - 2007/3

Y1 - 2007/3

N2 - The implementation of challenging novel materials and process techniques has led to remarkable device improvements in state-of-the-art high-performance SiGe HBTs, rivaling their III-V compound semiconductor counterparts. Vertical scaling, lateral scaling, and device structure innovations required to improve SiGe HBTs performance have benefited from advanced materials and process techniques developed for next generation CMOS technology. In this work, we present a review of recent process and materials development enabling operational speeds of SiGe HBTs approaching 400 GHz. In addition, we present device simulation results that show the extendibility of SiGe HBT technology performance towards half-terahertz and beyond with further scaling and device structure improvements.

AB - The implementation of challenging novel materials and process techniques has led to remarkable device improvements in state-of-the-art high-performance SiGe HBTs, rivaling their III-V compound semiconductor counterparts. Vertical scaling, lateral scaling, and device structure innovations required to improve SiGe HBTs performance have benefited from advanced materials and process techniques developed for next generation CMOS technology. In this work, we present a review of recent process and materials development enabling operational speeds of SiGe HBTs approaching 400 GHz. In addition, we present device simulation results that show the extendibility of SiGe HBT technology performance towards half-terahertz and beyond with further scaling and device structure improvements.

KW - Lateral scaling

KW - Raised extrinsic base

KW - Self-aligned structure

KW - SiGe HBTs

KW - Vertical scaling

UR - http://www.scopus.com/inward/record.url?scp=34547246173&partnerID=8YFLogxK

U2 - 10.1142/S0129156407004254

DO - 10.1142/S0129156407004254

M3 - Article

AN - SCOPUS:34547246173

SN - 0129-1564

VL - 17

SP - 61

EP - 80

JO - International Journal of High Speed Electronics and Systems

JF - International Journal of High Speed Electronics and Systems

IS - 1

ER -

Present status and future directions of SiGe HBT technology

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this