Present status and future directions of SiGe HBT technology

Marwan H. Khater, Thomas N. Adam, Rajendran Krishnasamy, Mattias E. Dahlstrom, Jae Sung Rieh, Kathryn T. Schonenberg, Bradly A. Orner, Francois Pagette, Kenneth Stein, David C. Ahlgren

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The implementation of challenging novel materials and process techniques has led to remarkable device improvements in state-of-the-art high-performance SiGe HBTs, rivaling their III-V compound semiconductor counterparts. Vertical scaling, lateral scaling, and device structure innovations required to improve SiGe HBTs performance have benefited from advanced materials and process techniques developed for next generation CMOS technology. In this work, we present a review of recent process and materials development enabling operational speeds of SiGe HBTs approaching 400 GHz. In addition, we present device simulation results that show the extendibility of SiGe HBT technology performance towards half-terahertz and beyond with further scaling and device structure improvements.

Original languageEnglish
Pages (from-to)61-80
Number of pages20
JournalInternational Journal of High Speed Electronics and Systems
Issue number1
Publication statusPublished - 2007 Mar

Bibliographical note

Funding Information:
The authors would like to acknowledge partial support of this work by DARPA under SPAWAR contract number N66001-02-C-8014. The authors also would like to thank Joseph Kocis, David Rockwell, Michael Longstreet, Karyn Hurley, and Robert Groves for their support in device process and test.


  • Lateral scaling
  • Raised extrinsic base
  • Self-aligned structure
  • SiGe HBTs
  • Vertical scaling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering


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