Abstract
Epitaxial lateral overgrowth (ELO) process of gallium nitride (GaN) films on cone-shaped patterned sapphire substrate (PSS), which was pretreated by ion-implantation was performed by using a metal organic chemical vapor deposition. A 250-nm-thick silicon dioxide (SiO2) mask was covered on the planar surface of the PSS to protect them from ion-implantation damages, whereas the cone-shaped patterns of the PSS were exposed to collide with the N+ ions. The ion-implantation pretreatment was selectively carried out on the cone-shaped pattern of PSS at 67.5 keV with a high dose of 5 × 1017 cm− 2. As a result of ion-implantation pretreatment, nucleation growth of GaN poly-grains was inhibited on the cone-shaped patterns with various crystal planes, such as c-like plane, R-like plane, and n-like plane. Surface roughness and crystal quality of GaN films grown on ion-implanted PSS were improved owing to the inhibition of nucleation growth on the patterns. The ion-implantation pretreatment is a very promising technique in the ELO process of GaN on an uneven substrate such as a cone-shaped PSS that includes various crystal planes.
Original language | English |
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Pages (from-to) | 2-7 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 641 |
DOIs | |
Publication status | Published - 2017 Nov 1 |
Bibliographical note
Publisher Copyright:© 2017
Keywords
- Epitaxial lateral overgrowth
- Gallium nitride
- Ion-implantation
- Metal organic chemical vapor deposition
- Patterned sapphire substrate
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry