Abstract
We propose and demonstrate a direct integration of a wavelength-scale III-V nanolaser onto a silicon-on-insulator (SOI) waveguide. By employing high-precision microtransfer printing techniques, with an optimally designed photonic crystal nanolaser structure, we experimentally achieved a coupling efficiency of 83% between the InGaAsP nanobeam laser and the SOI waveguide. Our III-V nanobeam laser is designed as an asymmetric one-dimensional photonic crystal cavity, which allows unidirectional coupling to the combined III-V nanobeam waveguide with high efficiency. Through the compact vertical coupler in the region where the III-V and SOI waveguides overlap at the optimal length of 3.2 μm, 88% of the light from the printed III-V nanolaser can theoretically be coupled to a vertically integrated SOI waveguide.
Original language | English |
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Pages (from-to) | 2117-2123 |
Number of pages | 7 |
Journal | ACS Photonics |
Volume | 4 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2017 Sept 20 |
Keywords
- IIIaV/Si integration
- Nanolasers
- Photonic crystals
- Silicon photonics
- photonic integrated circuits
- silicon waveguides
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biotechnology
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering