Printed nanolaser on silicon

Jungmin Lee; Indra Karnadi; Jin Tae Kim; Yong Hee Lee; Myung Ki Kim

doi:10.1021/acsphotonics.7b00488

Printed nanolaser on silicon

Jungmin Lee
, Indra Karnadi
, Jin Tae Kim
, Yong Hee Lee^*
, Myung Ki Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

We propose and demonstrate a direct integration of a wavelength-scale III-V nanolaser onto a silicon-on-insulator (SOI) waveguide. By employing high-precision microtransfer printing techniques, with an optimally designed photonic crystal nanolaser structure, we experimentally achieved a coupling efficiency of 83% between the InGaAsP nanobeam laser and the SOI waveguide. Our III-V nanobeam laser is designed as an asymmetric one-dimensional photonic crystal cavity, which allows unidirectional coupling to the combined III-V nanobeam waveguide with high efficiency. Through the compact vertical coupler in the region where the III-V and SOI waveguides overlap at the optimal length of 3.2 μm, 88% of the light from the printed III-V nanolaser can theoretically be coupled to a vertically integrated SOI waveguide.

Original language	English
Pages (from-to)	2117-2123
Number of pages	7
Journal	ACS Photonics
Volume	4
Issue number	9
DOIs	https://doi.org/10.1021/acsphotonics.7b00488
Publication status	Published - 2017 Sept 20

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

Keywords

IIIaV/Si integration
Nanolasers
Photonic crystals
Silicon photonics
photonic integrated circuits
silicon waveguides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1021/acsphotonics.7b00488

Cite this

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title = "Printed nanolaser on silicon",

abstract = "We propose and demonstrate a direct integration of a wavelength-scale III-V nanolaser onto a silicon-on-insulator (SOI) waveguide. By employing high-precision microtransfer printing techniques, with an optimally designed photonic crystal nanolaser structure, we experimentally achieved a coupling efficiency of 83\% between the InGaAsP nanobeam laser and the SOI waveguide. Our III-V nanobeam laser is designed as an asymmetric one-dimensional photonic crystal cavity, which allows unidirectional coupling to the combined III-V nanobeam waveguide with high efficiency. Through the compact vertical coupler in the region where the III-V and SOI waveguides overlap at the optimal length of 3.2 μm, 88\% of the light from the printed III-V nanolaser can theoretically be coupled to a vertically integrated SOI waveguide.",

keywords = "IIIaV/Si integration, Nanolasers, Photonic crystals, Silicon photonics, photonic integrated circuits, silicon waveguides",

author = "Jungmin Lee and Indra Karnadi and Kim, \{Jin Tae\} and Lee, \{Yong Hee\} and Kim, \{Myung Ki\}",

note = "Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

month = sep,

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doi = "10.1021/acsphotonics.7b00488",

language = "English",

volume = "4",

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journal = "ACS Photonics",

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T1 - Printed nanolaser on silicon

AU - Lee, Jungmin

AU - Karnadi, Indra

AU - Kim, Jin Tae

AU - Lee, Yong Hee

AU - Kim, Myung Ki

PY - 2017/9/20

Y1 - 2017/9/20

N2 - We propose and demonstrate a direct integration of a wavelength-scale III-V nanolaser onto a silicon-on-insulator (SOI) waveguide. By employing high-precision microtransfer printing techniques, with an optimally designed photonic crystal nanolaser structure, we experimentally achieved a coupling efficiency of 83% between the InGaAsP nanobeam laser and the SOI waveguide. Our III-V nanobeam laser is designed as an asymmetric one-dimensional photonic crystal cavity, which allows unidirectional coupling to the combined III-V nanobeam waveguide with high efficiency. Through the compact vertical coupler in the region where the III-V and SOI waveguides overlap at the optimal length of 3.2 μm, 88% of the light from the printed III-V nanolaser can theoretically be coupled to a vertically integrated SOI waveguide.

AB - We propose and demonstrate a direct integration of a wavelength-scale III-V nanolaser onto a silicon-on-insulator (SOI) waveguide. By employing high-precision microtransfer printing techniques, with an optimally designed photonic crystal nanolaser structure, we experimentally achieved a coupling efficiency of 83% between the InGaAsP nanobeam laser and the SOI waveguide. Our III-V nanobeam laser is designed as an asymmetric one-dimensional photonic crystal cavity, which allows unidirectional coupling to the combined III-V nanobeam waveguide with high efficiency. Through the compact vertical coupler in the region where the III-V and SOI waveguides overlap at the optimal length of 3.2 μm, 88% of the light from the printed III-V nanolaser can theoretically be coupled to a vertically integrated SOI waveguide.

KW - IIIaV/Si integration

KW - Nanolasers

KW - Photonic crystals

KW - Silicon photonics

KW - photonic integrated circuits

KW - silicon waveguides

UR - https://www.scopus.com/pages/publications/85029710016

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DO - 10.1021/acsphotonics.7b00488

M3 - Article

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EP - 2123

JO - ACS Photonics

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Printed nanolaser on silicon

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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