Printed silicon broadband membrane reflectors by laser interference lithography

Hyeon Jun Ha; Jungho Park; Bo Yeon Hwang; Sangbin Lee; Byeong Kwon Ju

doi:10.1109/SMICND.2013.6688107

Printed silicon broadband membrane reflectors by laser interference lithography

Hyeon Jun Ha, Jungho Park, Bo Yeon Hwang, Sangbin Lee, Byeong Kwon Ju

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on printed silicon photonic crystal broadband membrane reflectors (MRs) based on laser interference lithography (LIL) patterning. Single-layer photonic crystal membrane which was formed by the LIL technique on a silicon-on-insulator (SOI) wafer was transferred by the contact printing method using the polydimethylsiloxane (PDMS) stamp on a glass substrate. These broadband silicon-MRs show high-reflectivity of 95 % around 1200 nm wavelength with bandwidth of about 100 nm. This simplest and easiest method to fabricate broadband MRs has great potential for many types of optoelectronic and photonic devices.

Original language	English
Title of host publication	CAS 2013 Proceedings - 2013 International Semiconductor Conference
Pages	123-126
Number of pages	4
DOIs	https://doi.org/10.1109/SMICND.2013.6688107
Publication status	Published - 2013
Event	36th International Semiconductor Conference, CAS 2013 - Sinaia, Romania Duration: 2013 Oct 14 → 2013 Oct 16

Publication series

Name	Proceedings of the International Semiconductor Conference, CAS
Volume	1

Conference

Conference	36th International Semiconductor Conference, CAS 2013
Country/Territory	Romania
City	Sinaia
Period	13/10/14 → 13/10/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/SMICND.2013.6688107

Cite this

Printed silicon broadband membrane reflectors by laser interference lithography. / Ha, Hyeon Jun; Park, Jungho; Hwang, Bo Yeon et al.
CAS 2013 Proceedings - 2013 International Semiconductor Conference. 2013. p. 123-126 6688107 (Proceedings of the International Semiconductor Conference, CAS; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ha, HJ, Park, J, Hwang, BY, Lee, S & Ju, BK 2013, Printed silicon broadband membrane reflectors by laser interference lithography. in CAS 2013 Proceedings - 2013 International Semiconductor Conference., 6688107, Proceedings of the International Semiconductor Conference, CAS, vol. 1, pp. 123-126, 36th International Semiconductor Conference, CAS 2013, Sinaia, Romania, 13/10/14. https://doi.org/10.1109/SMICND.2013.6688107

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abstract = "We report on printed silicon photonic crystal broadband membrane reflectors (MRs) based on laser interference lithography (LIL) patterning. Single-layer photonic crystal membrane which was formed by the LIL technique on a silicon-on-insulator (SOI) wafer was transferred by the contact printing method using the polydimethylsiloxane (PDMS) stamp on a glass substrate. These broadband silicon-MRs show high-reflectivity of 95 % around 1200 nm wavelength with bandwidth of about 100 nm. This simplest and easiest method to fabricate broadband MRs has great potential for many types of optoelectronic and photonic devices.",

author = "Ha, {Hyeon Jun} and Jungho Park and Hwang, {Bo Yeon} and Sangbin Lee and Ju, {Byeong Kwon}",

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AB - We report on printed silicon photonic crystal broadband membrane reflectors (MRs) based on laser interference lithography (LIL) patterning. Single-layer photonic crystal membrane which was formed by the LIL technique on a silicon-on-insulator (SOI) wafer was transferred by the contact printing method using the polydimethylsiloxane (PDMS) stamp on a glass substrate. These broadband silicon-MRs show high-reflectivity of 95 % around 1200 nm wavelength with bandwidth of about 100 nm. This simplest and easiest method to fabricate broadband MRs has great potential for many types of optoelectronic and photonic devices.

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Printed silicon broadband membrane reflectors by laser interference lithography

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