Process optimization approached by design of experiment method for Ga-doped ZnO thin films

Deuk Hee Lee; Sangsig Kim; Sang Yeol Lee

Process optimization approached by design of experiment method for Ga-doped ZnO thin films

Deuk Hee Lee, Sangsig Kim, Sang Yeol Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Design of experiment (DOE) method is employed for a systematic and highly efficient optimization of Ga-doped ZnO thin films synthesized by pulsed laser deposition (PLD) process. We sequentially adopted fractional-factorial design (FD) and central composite design (CCD) of the DOE methods. In fractional-FD stage, significant factors to make conductive electrode are found to target-substrate (T-S) distance and oxygen partial pressure. Moreover, correlation among the process factors is elucidated using surface profile modeling. Electrical properties of the GZO films grown on a glass substrate had been optimized to find that the lowest electrical resistivity of about 1.8'10^-4Wcm which was acquired with the T-S distance and the oxygen pressure of 4 cm and 7 mTorr, respectively. During the DOE-fueled optimization process, the transparency of the GZO films is ensured higher than 85 %.

Original language	English
Pages (from-to)	108-112
Number of pages	5
Journal	Transactions of the Korean Institute of Electrical Engineers
Volume	59
Issue number	1
Publication status	Published - 2010 Jan

Keywords

DOE
Ga-doped
PLD
TCO
ZnO

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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abstract = "Design of experiment (DOE) method is employed for a systematic and highly efficient optimization of Ga-doped ZnO thin films synthesized by pulsed laser deposition (PLD) process. We sequentially adopted fractional-factorial design (FD) and central composite design (CCD) of the DOE methods. In fractional-FD stage, significant factors to make conductive electrode are found to target-substrate (T-S) distance and oxygen partial pressure. Moreover, correlation among the process factors is elucidated using surface profile modeling. Electrical properties of the GZO films grown on a glass substrate had been optimized to find that the lowest electrical resistivity of about 1.8'10-4Wcm which was acquired with the T-S distance and the oxygen pressure of 4 cm and 7 mTorr, respectively. During the DOE-fueled optimization process, the transparency of the GZO films is ensured higher than 85 %.",

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AB - Design of experiment (DOE) method is employed for a systematic and highly efficient optimization of Ga-doped ZnO thin films synthesized by pulsed laser deposition (PLD) process. We sequentially adopted fractional-factorial design (FD) and central composite design (CCD) of the DOE methods. In fractional-FD stage, significant factors to make conductive electrode are found to target-substrate (T-S) distance and oxygen partial pressure. Moreover, correlation among the process factors is elucidated using surface profile modeling. Electrical properties of the GZO films grown on a glass substrate had been optimized to find that the lowest electrical resistivity of about 1.8'10-4Wcm which was acquired with the T-S distance and the oxygen pressure of 4 cm and 7 mTorr, respectively. During the DOE-fueled optimization process, the transparency of the GZO films is ensured higher than 85 %.

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Process optimization approached by design of experiment method for Ga-doped ZnO thin films

Abstract

Keywords

ASJC Scopus subject areas

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