Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

D. C. Ahlgren; B. Jagannathan; S. J. Jeng; P. Smith; D. Angell; H. Chen; M. Khater; F. Pagette; J. S. Rieh; K. Schonenberg; A. Stricker; G. Freeman; A. Joseph; K. Stein; S. Subbanna

Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

D. C. Ahlgren^*
, B. Jagannathan
, S. J. Jeng
, P. Smith
, D. Angell
, H. Chen
, M. Khater
, F. Pagette
, J. S. Rieh
, K. Schonenberg
, A. Stricker
, G. Freeman
, A. Joseph
, K. Stein
, S. Subbanna

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

12 Citations (Scopus)

Abstract

The process variability analysis of a Si/SiGe heterojunction bipolar transistor (HBT) with greater than 200 GHz performance was discussed. The robustness of the device was demonstrated over a wide range of deliberate process induced variations. The analysis showed that AC and DC device results on 200 mm wafers demonstrated a wide process window resulting in a highly manufacturable HBT technology.

Original language	English
Pages	80-83
Number of pages	4
Publication status	Published - 2002
Externally published	Yes
Event	2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States Duration: 2002 Sept 29 → 2002 Oct 1

Other

Other	2002 IEEE Biopolar/BicMOS and Technology Meeting
Country/Territory	United States
City	Minneapolis
Period	02/9/29 → 02/10/1

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Ahlgren, D. C., Jagannathan, B., Jeng, S. J., Smith, P., Angell, D., Chen, H., Khater, M., Pagette, F., Rieh, J. S., Schonenberg, K., Stricker, A., Freeman, G., Joseph, A., Stein, K., & Subbanna, S. (2002). Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance. 80-83. Paper presented at 2002 IEEE Biopolar/BicMOS and Technology Meeting, Minneapolis, United States.

Ahlgren, DC, Jagannathan, B, Jeng, SJ, Smith, P, Angell, D, Chen, H, Khater, M, Pagette, F, Rieh, JS, Schonenberg, K, Stricker, A, Freeman, G, Joseph, A, Stein, K & Subbanna, S 2002, 'Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance', Paper presented at 2002 IEEE Biopolar/BicMOS and Technology Meeting, Minneapolis, United States, 02/9/29 - 02/10/1 pp. 80-83.

@conference{78a80964318c41dd9b294636d5b1c391,

title = "Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance",

abstract = "The process variability analysis of a Si/SiGe heterojunction bipolar transistor (HBT) with greater than 200 GHz performance was discussed. The robustness of the device was demonstrated over a wide range of deliberate process induced variations. The analysis showed that AC and DC device results on 200 mm wafers demonstrated a wide process window resulting in a highly manufacturable HBT technology.",

author = "Ahlgren, \{D. C.\} and B. Jagannathan and Jeng, \{S. J.\} and P. Smith and D. Angell and H. Chen and M. Khater and F. Pagette and Rieh, \{J. S.\} and K. Schonenberg and A. Stricker and G. Freeman and A. Joseph and K. Stein and S. Subbanna",

year = "2002",

language = "English",

pages = "80--83",

note = "2002 IEEE Biopolar/BicMOS and Technology Meeting ; Conference date: 29-09-2002 Through 01-10-2002",

}

TY - CONF

T1 - Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

AU - Ahlgren, D. C.

AU - Jagannathan, B.

AU - Jeng, S. J.

AU - Smith, P.

AU - Angell, D.

AU - Chen, H.

AU - Khater, M.

AU - Pagette, F.

AU - Rieh, J. S.

AU - Schonenberg, K.

AU - Stricker, A.

AU - Freeman, G.

AU - Joseph, A.

AU - Stein, K.

AU - Subbanna, S.

PY - 2002

Y1 - 2002

N2 - The process variability analysis of a Si/SiGe heterojunction bipolar transistor (HBT) with greater than 200 GHz performance was discussed. The robustness of the device was demonstrated over a wide range of deliberate process induced variations. The analysis showed that AC and DC device results on 200 mm wafers demonstrated a wide process window resulting in a highly manufacturable HBT technology.

AB - The process variability analysis of a Si/SiGe heterojunction bipolar transistor (HBT) with greater than 200 GHz performance was discussed. The robustness of the device was demonstrated over a wide range of deliberate process induced variations. The analysis showed that AC and DC device results on 200 mm wafers demonstrated a wide process window resulting in a highly manufacturable HBT technology.

UR - https://www.scopus.com/pages/publications/0036438063

UR - https://www.scopus.com/pages/publications/0036438063#tab=citedBy

M3 - Paper

AN - SCOPUS:0036438063

SP - 80

EP - 83

T2 - 2002 IEEE Biopolar/BicMOS and Technology Meeting

Y2 - 29 September 2002 through 1 October 2002

ER -

Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

Abstract

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ASJC Scopus subject areas

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