Processing technique for single-walled carbon nanotube-based sensor arrays

Kyeong Heon Kim; Chi Woong Jang; Tae Geun Kim; Seok Lee; Sun Ho Kim; Young Tae Byun

doi:10.1166/jnn.2012.4661

Processing technique for single-walled carbon nanotube-based sensor arrays

Kyeong Heon Kim, Chi Woong Jang, Tae Geun Kim, Seok Lee, Sun Ho Kim, Young Tae Byun

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide (SiO ₂) surface by using only a photolithographic process; then, we fabricated 8×8 field-emission transistor (FET) arrays for sensor applications. Photoresist (PR) patterns were made on a SiO ₂-grown Si substrate by using the photolithographic process. This PR-patterned substrate was dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). The PR patterns were removed by using acetone. As a result, selectively-assembled SWCNT channels in 8×8 FET arrays could be fabricated between source and drain electrodes without complicated chemical steps using octadecyltrichlorosilane (OTS). Finally, we successfully fabricated 8×8 SWCNT-based multi-channel FET arrays by using our novel self-assembly method.

Original language	English
Pages (from-to)	1251-1255
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	12
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2012.4661
Publication status	Published - 2012

Keywords

FET arrays
Photolithography
SAM
SWCNT
Sensor

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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10.1166/jnn.2012.4661

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title = "Processing technique for single-walled carbon nanotube-based sensor arrays",

abstract = "We investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide (SiO 2) surface by using only a photolithographic process; then, we fabricated 8×8 field-emission transistor (FET) arrays for sensor applications. Photoresist (PR) patterns were made on a SiO 2-grown Si substrate by using the photolithographic process. This PR-patterned substrate was dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). The PR patterns were removed by using acetone. As a result, selectively-assembled SWCNT channels in 8×8 FET arrays could be fabricated between source and drain electrodes without complicated chemical steps using octadecyltrichlorosilane (OTS). Finally, we successfully fabricated 8×8 SWCNT-based multi-channel FET arrays by using our novel self-assembly method.",

keywords = "FET arrays, Photolithography, SAM, SWCNT, Sensor",

author = "Kim, {Kyeong Heon} and Jang, {Chi Woong} and Kim, {Tae Geun} and Seok Lee and Kim, {Sun Ho} and Byun, {Young Tae}",

year = "2012",

doi = "10.1166/jnn.2012.4661",

language = "English",

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AU - Kim, Kyeong Heon

AU - Jang, Chi Woong

AU - Kim, Tae Geun

AU - Lee, Seok

AU - Kim, Sun Ho

AU - Byun, Young Tae

PY - 2012

Y1 - 2012

N2 - We investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide (SiO 2) surface by using only a photolithographic process; then, we fabricated 8×8 field-emission transistor (FET) arrays for sensor applications. Photoresist (PR) patterns were made on a SiO 2-grown Si substrate by using the photolithographic process. This PR-patterned substrate was dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). The PR patterns were removed by using acetone. As a result, selectively-assembled SWCNT channels in 8×8 FET arrays could be fabricated between source and drain electrodes without complicated chemical steps using octadecyltrichlorosilane (OTS). Finally, we successfully fabricated 8×8 SWCNT-based multi-channel FET arrays by using our novel self-assembly method.

AB - We investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide (SiO 2) surface by using only a photolithographic process; then, we fabricated 8×8 field-emission transistor (FET) arrays for sensor applications. Photoresist (PR) patterns were made on a SiO 2-grown Si substrate by using the photolithographic process. This PR-patterned substrate was dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). The PR patterns were removed by using acetone. As a result, selectively-assembled SWCNT channels in 8×8 FET arrays could be fabricated between source and drain electrodes without complicated chemical steps using octadecyltrichlorosilane (OTS). Finally, we successfully fabricated 8×8 SWCNT-based multi-channel FET arrays by using our novel self-assembly method.

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KW - Photolithography

KW - SAM

KW - SWCNT

KW - Sensor

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ER -

Processing technique for single-walled carbon nanotube-based sensor arrays

Abstract

Keywords

ASJC Scopus subject areas

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