Product Applications and Technology Directions with SiGe BiCMOS

Alvin J. Joseph; James Dunn; Greg Freeman; David L. Harame; Dough Coolbaugh; Rob Groves; Kenneth J. Stein; Rich Volant; Seshadri Subbanna; V. S. Marangos; Stephen St. Onge; Ebenezer Eshun; P. Cooper; Jeffrey B. Johnson; Jae Sung Rieh; Basanth Jagannathan; Vidhya Ramachandran; David Ahlgren; Dawn Wang; X. Wang

doi:10.1109/JSSC.2003.815930

Product Applications and Technology Directions with SiGe BiCMOS

Alvin J. Joseph, James Dunn, Greg Freeman, David L. Harame, Dough Coolbaugh, Rob Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.

Original language	English
Pages (from-to)	1471-1478
Number of pages	8
Journal	IEEE Journal of Solid-State Circuits
Volume	38
Issue number	9
DOIs	https://doi.org/10.1109/JSSC.2003.815930
Publication status	Published - 2003 Sept
Externally published	Yes

Bibliographical note

Funding Information:
The authors would like to thank the management within the IBM Semiconductor Research and Development Center (SRDC), the manufacturing facilities in Essex Junction, VT, and the Advanced Semiconductor Technology Center (ASTC), East Fishkill, NY, for support of this work. The authors sincerely acknowledge the collaboration and support of various product design and development groups, both IBM internal and external customers, for the success of this project.

Keywords

BiCMOS
Multiplexer (MUX)
Power amplifier
SiGe HBT
Voltage-controlled oscillator (VCO)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/JSSC.2003.815930

Cite this

Joseph, A. J., Dunn, J., Freeman, G., Harame, D. L., Coolbaugh, D., Groves, R., Stein, K. J., Volant, R., Subbanna, S., Marangos, V. S., St. Onge, S., Eshun, E., Cooper, P., Johnson, J. B., Rieh, J. S., Jagannathan, B., Ramachandran, V., Ahlgren, D., Wang, D., & Wang, X. (2003). Product Applications and Technology Directions with SiGe BiCMOS. IEEE Journal of Solid-State Circuits, 38(9), 1471-1478. https://doi.org/10.1109/JSSC.2003.815930

Joseph, AJ, Dunn, J, Freeman, G, Harame, DL, Coolbaugh, D, Groves, R, Stein, KJ, Volant, R, Subbanna, S, Marangos, VS, St. Onge, S, Eshun, E, Cooper, P, Johnson, JB, Rieh, JS, Jagannathan, B, Ramachandran, V, Ahlgren, D, Wang, D & Wang, X 2003, 'Product Applications and Technology Directions with SiGe BiCMOS', IEEE Journal of Solid-State Circuits, vol. 38, no. 9, pp. 1471-1478. https://doi.org/10.1109/JSSC.2003.815930

@article{2699bb47c2714b11bd5319222b35f13e,

title = "Product Applications and Technology Directions with SiGe BiCMOS",

abstract = "In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.",

keywords = "BiCMOS, Multiplexer (MUX), Power amplifier, SiGe HBT, Voltage-controlled oscillator (VCO)",

author = "Joseph, {Alvin J.} and James Dunn and Greg Freeman and Harame, {David L.} and Dough Coolbaugh and Rob Groves and Stein, {Kenneth J.} and Rich Volant and Seshadri Subbanna and Marangos, {V. S.} and {St. Onge}, Stephen and Ebenezer Eshun and P. Cooper and Johnson, {Jeffrey B.} and Rieh, {Jae Sung} and Basanth Jagannathan and Vidhya Ramachandran and David Ahlgren and Dawn Wang and X. Wang",

note = "Funding Information: The authors would like to thank the management within the IBM Semiconductor Research and Development Center (SRDC), the manufacturing facilities in Essex Junction, VT, and the Advanced Semiconductor Technology Center (ASTC), East Fishkill, NY, for support of this work. The authors sincerely acknowledge the collaboration and support of various product design and development groups, both IBM internal and external customers, for the success of this project.",

year = "2003",

month = sep,

doi = "10.1109/JSSC.2003.815930",

language = "English",

volume = "38",

pages = "1471--1478",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Product Applications and Technology Directions with SiGe BiCMOS

AU - Joseph, Alvin J.

AU - Dunn, James

AU - Freeman, Greg

AU - Harame, David L.

AU - Coolbaugh, Dough

AU - Groves, Rob

AU - Stein, Kenneth J.

AU - Volant, Rich

AU - Subbanna, Seshadri

AU - Marangos, V. S.

AU - St. Onge, Stephen

AU - Eshun, Ebenezer

AU - Cooper, P.

AU - Johnson, Jeffrey B.

AU - Rieh, Jae Sung

AU - Jagannathan, Basanth

AU - Ramachandran, Vidhya

AU - Ahlgren, David

AU - Wang, Dawn

AU - Wang, X.

N1 - Funding Information: The authors would like to thank the management within the IBM Semiconductor Research and Development Center (SRDC), the manufacturing facilities in Essex Junction, VT, and the Advanced Semiconductor Technology Center (ASTC), East Fishkill, NY, for support of this work. The authors sincerely acknowledge the collaboration and support of various product design and development groups, both IBM internal and external customers, for the success of this project.

PY - 2003/9

Y1 - 2003/9

N2 - In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.

AB - In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.

KW - BiCMOS

KW - Multiplexer (MUX)

KW - Power amplifier

KW - SiGe HBT

KW - Voltage-controlled oscillator (VCO)

UR - http://www.scopus.com/inward/record.url?scp=0041779674&partnerID=8YFLogxK

U2 - 10.1109/JSSC.2003.815930

DO - 10.1109/JSSC.2003.815930

M3 - Article

AN - SCOPUS:0041779674

SN - 0018-9200

VL - 38

SP - 1471

EP - 1478

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 9

ER -

Product Applications and Technology Directions with SiGe BiCMOS

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this