Product applications and technology directions with SiGe BiCMOS

J. Dunn; G. Freeman; D. Harame; A. Joseph; D. Coolbaugh; R. Groves; K. Stein; R. Volant; S. Subbanna; V. S. Marangos; S. St. Onge; E. Eshun; P. Cooper; J. Johnson; J. Rieh; V. Ramachandran; D. Ahlgren; D. Wang; X. Wang

Product applications and technology directions with SiGe BiCMOS

J. Dunn, G. Freeman, D. Harame, A. Joseph, D. Coolbaugh, R. Groves, K. Stein, R. Volant, S. Subbanna, V. S. Marangos, S. St. Onge, E. Eshun, P. Cooper, J. Johnson, J. Rieh, V. Ramachandran, D. Ahlgren, D. Wang, X. Wang

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

The effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications were discussed. The key component of the device was the SiGe-base HBT whose performance was improved to over 200 GHz in the 0.13 μm generation. The advantage of the technology over other platforms includes the ability to integrate different functions on a single chip.

Original language	English
Pages	135-138
Number of pages	4
Publication status	Published - 2002
Externally published	Yes
Event	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States Duration: 2002 Oct 20 → 2002 Oct 23

Other

Other	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
Country/Territory	United States
City	Monterey, CA
Period	02/10/20 → 02/10/23

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Dunn, J., Freeman, G., Harame, D., Joseph, A., Coolbaugh, D., Groves, R., Stein, K., Volant, R., Subbanna, S., Marangos, V. S., St. Onge, S., Eshun, E., Cooper, P., Johnson, J., Rieh, J., Ramachandran, V., Ahlgren, D., Wang, D., & Wang, X. (2002). Product applications and technology directions with SiGe BiCMOS. 135-138. Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.

Dunn, J, Freeman, G, Harame, D, Joseph, A, Coolbaugh, D, Groves, R, Stein, K, Volant, R, Subbanna, S, Marangos, VS, St. Onge, S, Eshun, E, Cooper, P, Johnson, J, Rieh, J, Ramachandran, V, Ahlgren, D, Wang, D & Wang, X 2002, 'Product applications and technology directions with SiGe BiCMOS', Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States, 02/10/20 - 02/10/23 pp. 135-138.

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abstract = "The effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications were discussed. The key component of the device was the SiGe-base HBT whose performance was improved to over 200 GHz in the 0.13 μm generation. The advantage of the technology over other platforms includes the ability to integrate different functions on a single chip.",

author = "J. Dunn and G. Freeman and D. Harame and A. Joseph and D. Coolbaugh and R. Groves and K. Stein and R. Volant and S. Subbanna and Marangos, {V. S.} and {St. Onge}, S. and E. Eshun and P. Cooper and J. Johnson and J. Rieh and V. Ramachandran and D. Ahlgren and D. Wang and X. Wang",

year = "2002",

language = "English",

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note = "Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) ; Conference date: 20-10-2002 Through 23-10-2002",

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T1 - Product applications and technology directions with SiGe BiCMOS

AU - Dunn, J.

AU - Freeman, G.

AU - Harame, D.

AU - Joseph, A.

AU - Coolbaugh, D.

AU - Groves, R.

AU - Stein, K.

AU - Volant, R.

AU - Subbanna, S.

AU - Marangos, V. S.

AU - St. Onge, S.

AU - Eshun, E.

AU - Cooper, P.

AU - Johnson, J.

AU - Rieh, J.

AU - Ramachandran, V.

AU - Ahlgren, D.

AU - Wang, D.

AU - Wang, X.

PY - 2002

Y1 - 2002

N2 - The effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications were discussed. The key component of the device was the SiGe-base HBT whose performance was improved to over 200 GHz in the 0.13 μm generation. The advantage of the technology over other platforms includes the ability to integrate different functions on a single chip.

AB - The effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications were discussed. The key component of the device was the SiGe-base HBT whose performance was improved to over 200 GHz in the 0.13 μm generation. The advantage of the technology over other platforms includes the ability to integrate different functions on a single chip.

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M3 - Paper

AN - SCOPUS:0036438402

SP - 135

EP - 138

T2 - Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)

Y2 - 20 October 2002 through 23 October 2002

ER -

Product applications and technology directions with SiGe BiCMOS

Abstract

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ASJC Scopus subject areas

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