Program cache busy time control method for reducing peak current consumption of NAND flash memory in SSD applications

Se Chun Park, You Sung Kim, Ho Youb Cho, Sung Dae Choi, Mi Sun Yoon, Tae Yun Kim, Kun Woo Park, Jongsun Park, Soo Won Kim

    Research output: Contribution to journalArticlepeer-review

    Abstract

    In current NAND flash design, one of the most challenging issues is reducing peak current consumption (peak ICC), as it leads to peak power drop, which can cause malfunctions in NAND flash memory. This paper presents an efficient approach for reducing the peak ICC of the cache program in NAND flash memory - namely, a program Cache Busy Time (tPCBSY) control method. The proposed tPCBSY control method is based on the interesting observation that the array program current (ICC2) is mainly decided by the bit-line bias condition. In the proposed approach, when peak ICC2 becomes larger than a threshold value, which is determined by a cache loop number, cache data cannot be loaded to the cache buffer (CB). On the other hand, when peak ICC2 is smaller than the threshold level, cache data can be loaded to the CB. As a result, the peak ICC of the cache program is reduced by 32% at the least significant bit page and by 15% at the most significant bit page. In addition, the program throughput reaches 20 MB/s in multiplane cache program operation, without restrictions caused by a drop in peak power due to cache program operations in a solid-state drive.

    Original languageEnglish
    Pages (from-to)876-879
    Number of pages4
    JournalETRI Journal
    Volume36
    Issue number5
    DOIs
    Publication statusPublished - 2014 Oct 1

    Bibliographical note

    Publisher Copyright:
    © 2014 ETRI.

    Keywords

    • Bit line
    • Cache program
    • NAND flash memory
    • Peak current consumption
    • Solid-state drive

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • General Computer Science
    • Electrical and Electronic Engineering

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