Properties of boron-rich layer formed by boron diffusion in n-type silicon

Chanseok Kim; Sungeun Park; Young Do Kim; Hyomin Park; Seongtak Kim; Hyunho Kim; Hae Seok Lee; Donghwan Kim

doi:10.1016/j.tsf.2014.05.038

Properties of boron-rich layer formed by boron diffusion in n-type silicon

Chanseok Kim, Sungeun Park, Young Do Kim, Hyomin Park, Seongtak Kim, Hyunho Kim, Hae Seok Lee, Donghwan Kim

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

A boron-rich layer (BRL) is formed during the boron diffusion process in fabricating crystalline Si solar cells. We investigated the structural, optical, and electrical characteristics of BRL in n-type silicon. A boron emitter was formed using the BBr₃ liquid source in a tube furnace at 950 °C. BRL had an amorphous phase. The peak concentration of boron in BRL was over 10²³ atoms/cm³. BRL consisted of boron, silicon, and oxygen. The oxygen atoms seemed to have caused the formation of amorphous phase. BRL showed the refractive indices of 1.5-2.0, and the contact resistance of 0.8 mΩ cm².

Original language	English
Pages (from-to)	253-257
Number of pages	5
Journal	Thin Solid Films
Volume	564
DOIs	https://doi.org/10.1016/j.tsf.2014.05.038
Publication status	Published - 2014 Aug 1

Keywords

Boron emitter
Boron-rich layer
Material property
n-Type silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2014.05.038

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title = "Properties of boron-rich layer formed by boron diffusion in n-type silicon",

abstract = "A boron-rich layer (BRL) is formed during the boron diffusion process in fabricating crystalline Si solar cells. We investigated the structural, optical, and electrical characteristics of BRL in n-type silicon. A boron emitter was formed using the BBr3 liquid source in a tube furnace at 950 °C. BRL had an amorphous phase. The peak concentration of boron in BRL was over 1023 atoms/cm3. BRL consisted of boron, silicon, and oxygen. The oxygen atoms seemed to have caused the formation of amorphous phase. BRL showed the refractive indices of 1.5-2.0, and the contact resistance of 0.8 mΩ cm2.",

keywords = "Boron emitter, Boron-rich layer, Material property, n-Type silicon",

author = "Chanseok Kim and Sungeun Park and Kim, {Young Do} and Hyomin Park and Seongtak Kim and Hyunho Kim and Lee, {Hae Seok} and Donghwan Kim",

note = "Funding Information: This work was supported by the Human Resources Development program (No. 20124030200120 ) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Government, Ministry of Trade, Industry and Energy, and the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry and Energy (No. 20113010010010 ).",

year = "2014",

month = aug,

day = "1",

doi = "10.1016/j.tsf.2014.05.038",

language = "English",

volume = "564",

pages = "253--257",

journal = "Thin Solid Films",

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T1 - Properties of boron-rich layer formed by boron diffusion in n-type silicon

AU - Kim, Chanseok

AU - Park, Sungeun

AU - Kim, Young Do

AU - Park, Hyomin

AU - Kim, Seongtak

AU - Kim, Hyunho

AU - Lee, Hae Seok

AU - Kim, Donghwan

N1 - Funding Information: This work was supported by the Human Resources Development program (No. 20124030200120 ) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Government, Ministry of Trade, Industry and Energy, and the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry and Energy (No. 20113010010010 ).

PY - 2014/8/1

Y1 - 2014/8/1

N2 - A boron-rich layer (BRL) is formed during the boron diffusion process in fabricating crystalline Si solar cells. We investigated the structural, optical, and electrical characteristics of BRL in n-type silicon. A boron emitter was formed using the BBr3 liquid source in a tube furnace at 950 °C. BRL had an amorphous phase. The peak concentration of boron in BRL was over 1023 atoms/cm3. BRL consisted of boron, silicon, and oxygen. The oxygen atoms seemed to have caused the formation of amorphous phase. BRL showed the refractive indices of 1.5-2.0, and the contact resistance of 0.8 mΩ cm2.

AB - A boron-rich layer (BRL) is formed during the boron diffusion process in fabricating crystalline Si solar cells. We investigated the structural, optical, and electrical characteristics of BRL in n-type silicon. A boron emitter was formed using the BBr3 liquid source in a tube furnace at 950 °C. BRL had an amorphous phase. The peak concentration of boron in BRL was over 1023 atoms/cm3. BRL consisted of boron, silicon, and oxygen. The oxygen atoms seemed to have caused the formation of amorphous phase. BRL showed the refractive indices of 1.5-2.0, and the contact resistance of 0.8 mΩ cm2.

KW - Boron emitter

KW - Boron-rich layer

KW - Material property

KW - n-Type silicon

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U2 - 10.1016/j.tsf.2014.05.038

DO - 10.1016/j.tsf.2014.05.038

M3 - Article

AN - SCOPUS:84904042327

SN - 0040-6090

VL - 564

SP - 253

EP - 257

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Properties of boron-rich layer formed by boron diffusion in n-type silicon

Abstract

Keywords

ASJC Scopus subject areas

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