Properties of epitaxial GaN on refractory metal substrates

Jaime A. Freitas; Larry B. Rowland; Jihyun Kim; Mohammad Fatemi

doi:10.1063/1.2709512

Properties of epitaxial GaN on refractory metal substrates

Jaime A. Freitas, Larry B. Rowland, Jihyun Kim, Mohammad Fatemi

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The authors demonstrate here that GaN films with good surface morphology and structural, optical, and electronic properties can be grown on metallic titanium carbide substrates. X-ray rocking curve and Raman scattering measurements confirmed the high crystalline quality of the wurtzite structure film. Variable temperature photoluminescence measurements of sharp and intense emission lines provided insights into the nature of the recombination processes, the carrier background type, and the carrier concentration. The high quality of the interface and substrate Ohmic contacts was verified. The ability to grow high-quality films on metallic substrates provides the means for advanced vertical and high-power and/or high-temperature device fabrication.

Original language	English
Article number	091910
Journal	Applied Physics Letters
Volume	90
Issue number	9
DOIs	https://doi.org/10.1063/1.2709512
Publication status	Published - 2007

Bibliographical note

Funding Information:
The authors would like to thank J. C. Culbertson and R. T. Holm for providing the AFM and sample thickness measurements, respectively. This work was partially supported by an Office of Naval Research contract under the management of C. E. C. Wood.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2709512

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title = "Properties of epitaxial GaN on refractory metal substrates",

abstract = "The authors demonstrate here that GaN films with good surface morphology and structural, optical, and electronic properties can be grown on metallic titanium carbide substrates. X-ray rocking curve and Raman scattering measurements confirmed the high crystalline quality of the wurtzite structure film. Variable temperature photoluminescence measurements of sharp and intense emission lines provided insights into the nature of the recombination processes, the carrier background type, and the carrier concentration. The high quality of the interface and substrate Ohmic contacts was verified. The ability to grow high-quality films on metallic substrates provides the means for advanced vertical and high-power and/or high-temperature device fabrication.",

author = "Freitas, {Jaime A.} and Rowland, {Larry B.} and Jihyun Kim and Mohammad Fatemi",

note = "Funding Information: The authors would like to thank J. C. Culbertson and R. T. Holm for providing the AFM and sample thickness measurements, respectively. This work was partially supported by an Office of Naval Research contract under the management of C. E. C. Wood.",

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doi = "10.1063/1.2709512",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

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T1 - Properties of epitaxial GaN on refractory metal substrates

AU - Freitas, Jaime A.

AU - Rowland, Larry B.

AU - Kim, Jihyun

AU - Fatemi, Mohammad

N1 - Funding Information: The authors would like to thank J. C. Culbertson and R. T. Holm for providing the AFM and sample thickness measurements, respectively. This work was partially supported by an Office of Naval Research contract under the management of C. E. C. Wood.

PY - 2007

Y1 - 2007

N2 - The authors demonstrate here that GaN films with good surface morphology and structural, optical, and electronic properties can be grown on metallic titanium carbide substrates. X-ray rocking curve and Raman scattering measurements confirmed the high crystalline quality of the wurtzite structure film. Variable temperature photoluminescence measurements of sharp and intense emission lines provided insights into the nature of the recombination processes, the carrier background type, and the carrier concentration. The high quality of the interface and substrate Ohmic contacts was verified. The ability to grow high-quality films on metallic substrates provides the means for advanced vertical and high-power and/or high-temperature device fabrication.

AB - The authors demonstrate here that GaN films with good surface morphology and structural, optical, and electronic properties can be grown on metallic titanium carbide substrates. X-ray rocking curve and Raman scattering measurements confirmed the high crystalline quality of the wurtzite structure film. Variable temperature photoluminescence measurements of sharp and intense emission lines provided insights into the nature of the recombination processes, the carrier background type, and the carrier concentration. The high quality of the interface and substrate Ohmic contacts was verified. The ability to grow high-quality films on metallic substrates provides the means for advanced vertical and high-power and/or high-temperature device fabrication.

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DO - 10.1063/1.2709512

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

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ER -

Properties of epitaxial GaN on refractory metal substrates

Abstract

Bibliographical note

ASJC Scopus subject areas

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