The authors demonstrate here that GaN films with good surface morphology and structural, optical, and electronic properties can be grown on metallic titanium carbide substrates. X-ray rocking curve and Raman scattering measurements confirmed the high crystalline quality of the wurtzite structure film. Variable temperature photoluminescence measurements of sharp and intense emission lines provided insights into the nature of the recombination processes, the carrier background type, and the carrier concentration. The high quality of the interface and substrate Ohmic contacts was verified. The ability to grow high-quality films on metallic substrates provides the means for advanced vertical and high-power and/or high-temperature device fabrication.
|Journal||Applied Physics Letters|
|Publication status||Published - 2007|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)