Properties of epitaxial GaN on refractory metal substrates

Jaime A. Freitas, Larry B. Rowland, Jihyun Kim, Mohammad Fatemi

    Research output: Contribution to journalArticlepeer-review

    13 Citations (Scopus)

    Abstract

    The authors demonstrate here that GaN films with good surface morphology and structural, optical, and electronic properties can be grown on metallic titanium carbide substrates. X-ray rocking curve and Raman scattering measurements confirmed the high crystalline quality of the wurtzite structure film. Variable temperature photoluminescence measurements of sharp and intense emission lines provided insights into the nature of the recombination processes, the carrier background type, and the carrier concentration. The high quality of the interface and substrate Ohmic contacts was verified. The ability to grow high-quality films on metallic substrates provides the means for advanced vertical and high-power and/or high-temperature device fabrication.

    Original languageEnglish
    Article number091910
    JournalApplied Physics Letters
    Volume90
    Issue number9
    DOIs
    Publication statusPublished - 2007

    Bibliographical note

    Funding Information:
    The authors would like to thank J. C. Culbertson and R. T. Holm for providing the AFM and sample thickness measurements, respectively. This work was partially supported by an Office of Naval Research contract under the management of C. E. C. Wood.

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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